BSC034N06NS

BSC034N06NS
Mfr. #:
BSC034N06NS
Manufacturer:
Infineon Technologies
Description:
MOSFET DIFFERENTIATED MOSFETS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC034N06NS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3.4 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
33 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
74 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
46 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
19 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
BSC034N06NSATMA1 SP001067010
Unit Weight:
0.006702 oz
Tags
BSC034N06, BSC034, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC034N06NS
DISTI # 31073490
Infineon Technologies AG0160
  • 100:$1.0595
  • 50:$1.2521
  • 10:$1.5300
  • 9:$2.9962
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.7150
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
BSC034N06NS
DISTI # C1S322000636938
Infineon Technologies AGMOSFETs160
  • 100:$0.8310
  • 50:$0.9820
  • 10:$1.2000
  • 1:$2.3500
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC034N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5759
  • 10000:$0.5549
  • 20000:$0.5349
  • 30000:$0.5169
  • 50000:$0.5079
BSC034N06NSATMA1
DISTI # 34AC1376
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes0
  • 1:$1.4800
  • 10:$1.2500
  • 25:$1.1700
  • 50:$1.0800
  • 100:$1.0000
  • 250:$0.9380
  • 500:$0.8760
  • 1000:$0.7250
BSC034N06NS
DISTI # 726-BSC034N06NS
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
0
  • 1:$1.4800
  • 10:$1.2500
  • 100:$1.0000
  • 500:$0.8760
  • 1000:$0.7250
  • 2500:$0.6760
  • 5000:$0.6510
BSC034N06NSATMA1
DISTI # 726-BSC034N06NSATMA1
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
0
  • 1:$1.4800
  • 10:$1.2500
  • 100:$1.0000
  • 500:$0.8760
  • 1000:$0.7250
  • 2500:$0.6760
  • 5000:$0.6510
BSC034N06NSATMA1
DISTI # 2781053
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON
RoHS: Compliant
0
  • 5:£1.3100
  • 25:£1.1900
  • 100:£0.9560
BSC034N06NSATMA1
DISTI # 2781053
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON
RoHS: Compliant
0
  • 5:$2.5100
  • 25:$2.1800
  • 100:$1.7800
Image Part # Description
BSC030N04NS G

Mfr.#: BSC030N04NS G

OMO.#: OMO-BSC030N04NS-G

MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC035N10NS5ATMA1

Mfr.#: BSC035N10NS5ATMA1

OMO.#: OMO-BSC035N10NS5ATMA1

MOSFET 100VPower transistor OptiMOS 5
BSC030NO3LS

Mfr.#: BSC030NO3LS

OMO.#: OMO-BSC030NO3LS-1190

New and Original
BSC030P03NS3G

Mfr.#: BSC030P03NS3G

OMO.#: OMO-BSC030P03NS3G-1190

New and Original
BSC030PNS

Mfr.#: BSC030PNS

OMO.#: OMO-BSC030PNS-1190

New and Original
BSC034N03LS G

Mfr.#: BSC034N03LS G

OMO.#: OMO-BSC034N03LS-G-1190

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC036NE7NS3G

Mfr.#: BSC036NE7NS3G

OMO.#: OMO-BSC036NE7NS3G-1190

POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC039N06NS

Mfr.#: BSC039N06NS

OMO.#: OMO-BSC039N06NS-1190

Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP
BSC039N08NS5

Mfr.#: BSC039N08NS5

OMO.#: OMO-BSC039N08NS5-1190

MOSFETs
BSC030N08NS5ATMA1

Mfr.#: BSC030N08NS5ATMA1

OMO.#: OMO-BSC030N08NS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 80V 100A
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of BSC034N06NS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.83
$1.83
10
$1.56
$15.60
100
$1.25
$125.00
500
$1.09
$545.00
1000
$0.91
$907.00
2500
$0.84
$2 110.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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