RJH1CD6DPQ-E0#T2

Mfr. #:: RJH1CD6DPQ-E0#T2
Manufacturer:: Renesas Electronics
Description:: IGBT Transistors IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: RJH1CD6DPQ-E0#T2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Renesas Electronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tube

Brand:: Renesas Electronics

Moisture Sensitive:: Yes

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Tags: RJH1CD, RJH1C, RJH1, RJH

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH1CD6DPQ-E0#T2 Description

***et: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube

***i-Key: IGBT 1200V 50A 290W TO247

*** Electronic Components: IGBT Transistors IGBT

*** Source Electronics: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3

***ure Electronics: IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1

***ource: IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A

***ment14 APAC: IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:365W

***ineon SCT: The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses, PG-TO247-3, RoHS

***ineon: IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price

***ark: Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***p One Stop: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.4pF 25volts C0G +/-0.25pF

***ment14 APAC: IGBT,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:190W

***ineon SCT: Infineon's 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***et: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 25A, Field Stop Trench

***ark: Fs1Tigbt To247 25A 1200V Rohs Compliant: Yes

***rchild Semiconductor: Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp

***(Formerly Allied Electronics): Transistor IGBT N-Ch 600V 60A TO247

***nell: IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O