IPD082N10N3GATMA1

IPD082N10N3GATMA1
Mfr. #:
IPD082N10N3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
IPD082N10N3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
8.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
45 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
42 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
G IPD082N10N3 SP001127824
Unit Weight:
0.139332 oz
Tags
IPD082N10N3G, IPD082, IPD08, IPD0, IPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK
***p One Stop Japan
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 100V, 80A, 175Deg C, 125W; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.007Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Part # Mfg. Description Stock Price
IPD082N10N3GATMA1
DISTI # 33708613
Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 2500:$0.7907
IPD082N10N3GATMA1
DISTI # IPD082N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8475In Stock
  • 1000:$0.8092
  • 500:$0.9766
  • 100:$1.1887
  • 10:$1.4790
  • 1:$1.6500
IPD082N10N3GATMA1
DISTI # IPD082N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8475In Stock
  • 1000:$0.8092
  • 500:$0.9766
  • 100:$1.1887
  • 10:$1.4790
  • 1:$1.6500
IPD082N10N3GATMA1
DISTI # IPD082N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
7500In Stock
  • 12500:$0.6863
  • 5000:$0.7043
  • 2500:$0.7314
IPD082N10N3GATMA1
DISTI # V36:1790_06384005
Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500:$0.7213
IPD082N10N3GATMA1
DISTI # V72:2272_06384005
Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD082N10N3GATMA1
    DISTI # IPD082N10N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD082N10N3GATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.5239
    • 15000:$0.5339
    • 10000:$0.5519
    • 5000:$0.5729
    • 2500:$0.5939
    IPD082N10N3GATMA1
    DISTI # SP001127824
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R (Alt: SP001127824)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.5319
    • 15000:€0.5729
    • 10000:€0.6199
    • 5000:€0.6769
    • 2500:€0.8269
    IPD082N10N3GATMA1
    DISTI # 12AC9706
    Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes3080
    • 1000:$0.7560
    • 500:$0.9130
    • 250:$0.9770
    • 100:$1.0400
    • 50:$1.1300
    • 25:$1.2200
    • 10:$1.3000
    • 1:$1.5300
    IPD082N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - DPAK
    RoHS: Not Compliant
    2500Reel
    • 2500:$0.5650
    IPD082N10N3GATMA1
    DISTI # 726-IPD082N10N3GA
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    3739
    • 1:$1.5100
    • 10:$1.2900
    • 100:$1.0300
    • 500:$0.9040
    • 1000:$0.7490
    • 2500:$0.6970
    • 5000:$0.6710
    • 10000:$0.6450
    IPD082N10N3GATMA1
    DISTI # IPD082N10N3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO252-31137
    • 1000:$0.6993
    • 100:$0.7511
    • 10:$0.8649
    • 3:$0.9786
    • 1:$1.0879
    IPD082N10N3GATMA1
    DISTI # 2709872
    Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-252
    RoHS: Compliant
    2999
    • 1000:$1.3000
    • 500:$1.5800
    • 100:$2.0100
    • 10:$2.5000
    • 1:$2.7700
    IPD082N10N3GATMA1
    DISTI # XSFP00000104878
    Infineon Technologies AG 
    RoHS: Compliant
    5000 in Stock0 on Order
    • 5000:$0.7533
    • 2500:$0.8071
    IPD082N10N3GATMA1
    DISTI # 2709872
    Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-2526312
    • 500:£0.7030
    • 250:£0.7520
    • 100:£0.8010
    • 10:£1.0600
    • 1:£1.3400
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    D2510-6V0C-AR-WD

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    OMO.#: OMO-D2510-6V0C-AR-WD-3M

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    Mfr.#: B72580T0300K062

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    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of IPD082N10N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.51
    $1.51
    10
    $1.29
    $12.90
    100
    $1.03
    $103.00
    500
    $0.90
    $452.00
    1000
    $0.75
    $749.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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