IPP50R199CPXKSA1

Mfr. #:: IPP50R199CPXKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 500V 17A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP50R199CPXKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 500 V

Id - Continuous Drain Current:: 17 A

Rds On - Drain-Source Resistance:: 180 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Qg - Gate Charge:: 34 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 139 W

Configuration:: Single

Tradename:: CoolMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: CoolMOS CE

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 80 ns

Typical Turn-On Delay Time:: 35 ns

Part # Aliases:: IPP50R199CP IPP5R199CPXK SP000680934

Unit Weight:: 0.211644 oz

Tags: IPP50R199CP, IPP50R199, IPP50R19, IPP50R1, IPP50R, IPP50, IPP5, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP50R199CPXKSA1 Description

***ical: Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***p One Stop Global: Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220FP Tube

***ment14 APAC: MOSFET, N, 500V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:TO-220F; Power Dissipation Pd:34.5mW; Power Dissipation Pd:34.5W; Pulse Current Idm:63A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

***ure Electronics: Single N-Channel 500 V 0.19 Ohm 45 nC 30 W Silicon Flange Mount Mosfet TO-220FP

***icroelectronics: N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFET

***ical: Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 550V, 17A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.162ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

***icroelectronics: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP

*** Source Electronics: MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra

***or: MOSFET N-CH 500V 18A TO220

*** Europe: N-CH SINGLE 500V TO220FP

***: N-CHANNEL 500V

***nell: MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Market price

Part #	Mfg.	Description	Stock	Price
IPP50R199CPXKSA1 DISTI # V36:1790_06377424	Infineon Technologies AG	Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	0
IPP50R199CPXKSA1 DISTI # IPP50R199CPXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 550V 17A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.7015 500:$2.0175 100:$2.3700 50:$2.7346 1:$3.2200
IPP50R199CPXK DISTI # IPP50R199CPXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IPP50R199CPXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	2000:$1.3900 3000:$1.3900 5000:$1.3900 500:$1.4900 1000:$1.4900
IPP50R199CPXKSA1 DISTI # 13AC9076	Infineon Technologies AG	MOSFET, N-CH, 500V, 23A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	386	500:$2.0000 100:$2.3000 10:$2.6200 1:$3.0400
IPP50R199CPXKSA1 DISTI # 726-IPP50R199CPXKSA1	Infineon Technologies AG	MOSFET N-Ch 500V 17A TO220-3 RoHS: Compliant	710	1:$2.9200 10:$2.4800 100:$2.1500 250:$2.0400 500:$1.8300
IPP50R199CPXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS: Compliant	500	1000:$1.3300 500:$1.4000 100:$1.4600 25:$1.5200 1:$1.6400
IPP50R199CPXKSA1 DISTI # 8576909	Infineon Technologies AG	MOSFET N-CH 500V 17A COOLMOS TO-220AB, TU	950	500:£1.2630
IPP50R199CPXKSA1 DISTI # IPP50R199CPXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,500V,17A,139W,PG-TO220-3	471	1:$2.4300 3:$2.1400 10:$1.9300 100:$1.8000
IPP50R199CPXKSA1 DISTI # 2725869	Infineon Technologies AG	MOSFET, N-CH, 500V, 23A, TO-220 RoHS: Compliant	386	1000:$2.5900 500:$3.0600 100:$3.7800 50:$4.1600 1:$5.1600
IPP50R199CPXKSA1 DISTI # 2725869	Infineon Technologies AG	MOSFET, N-CH, 500V, 23A, TO-220	426	500:£1.2700 250:£1.4200 100:£1.4900 10:£1.7300 1:£2.5500
IPP50R199CPXKSA1 DISTI # XSKDRABS0006535	Infineon Technologies AG	RoHS: Compliant	300 in Stock0 on Order	300:$2.2320

Image	Part #	Description
	Mfr.#: BD9421F-GE2 OMO.#: OMO-BD9421F-GE2	LED Lighting Drivers White LED Driver for large LCD Panels
	Mfr.#: L6498DTR OMO.#: OMO-L6498DTR	Gate Drivers IND. & POWER CONV.
	Mfr.#: UCC27714DR OMO.#: OMO-UCC27714DR	Gate Drivers HV Gate Driver
	Mfr.#: IPP50R190CEXKSA1 OMO.#: OMO-IPP50R190CEXKSA1	MOSFET N-Ch 500V 18.5A TO220-3
	Mfr.#: R5F100GEAFB#30 OMO.#: OMO-R5F100GEAFB-30	16-bit Microcontrollers - MCU RL78/G13 64+4/4 48LQFP 7x7 (Copper Wire)
	Mfr.#: AC-USB3-AA OMO.#: OMO-AC-USB3-AA	USB Connectors USB A D SHELL PANEL
	Mfr.#: STD10NF30 OMO.#: OMO-STD10NF30-STMICROELECTRONICS	MOSFET N-CHANNEL 300V 10A DPAK
	Mfr.#: R75MW51004030J OMO.#: OMO-R75MW51004030J-KEMET	CAPACITOR, FILM, PP, 10UF, 400V, RAD
	Mfr.#: AC-USB3-AA OMO.#: OMO-AC-USB3-AA-AMPHENOL-SINE-SYSTEMS	USB A - USB A D SHELL PANEL
	Mfr.#: CRCW060351R1FKEAC OMO.#: OMO-CRCW060351R1FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 51R1 1% ET1

IPP50R199CPXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes