SI7956DP-T1-E3

Mfr. #:: SI7956DP-T1-E3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET DUAL N-CH 150V (D-S)
Lifecycle:: New from this manufacturer.
Datasheet:: SI7956DP-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI7956DP-E3

Unit-Weight: 0.017870 oz

Mounting-Style: SMD/SMT

Package-Case: PowerPAKR SO-8 Dual

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: PowerPAKR SO-8 Dual

Configuration: Dual

FET-Type: 2 N-Channel (Dual)

Power-Max: 1.4W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 150V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 2.6A

Rds-On-Max-Id-Vgs: 105 mOhm @ 4.1A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Charge-Qg-Vgs: 26nC @ 10V

Pd-Power-Dissipation: 1.4 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 36 ns

Rise-Time: 36 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 2.6 A

Vds-Drain-Source-Breakdown-Voltage: 150 V

Rds-On-Drain-Source-Resistance: 105 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 18 ns

Typical-Turn-On-Delay-Time: 13 ns

Channel-Mode: Enhancement

Tags: SI795, SI79, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7956DP-T1-E3 Description

***th Star Micro: Transistor MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET 2N-CH 150V 2.6A PPAK SO-8

***ark: Transistor; Continuous Drain Current, Id:4100mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
SI7956DP-T1-E3 DISTI # V72:2272_09216419	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	5440	3000:$1.6610 1000:$1.6790 500:$1.8390 250:$2.0010 100:$2.1210 25:$2.3950 10:$2.4750 1:$2.7350
SI7956DP-T1-E3 DISTI # SI7956DP-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.6678
SI7956DP-T1-E3 DISTI # 31339702	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	5440	3000:$1.6870 1000:$1.6930 500:$1.8510 250:$2.0150 100:$2.1320 25:$2.4070 10:$2.4880 5:$2.7530
SI7956DP-T1-E3 DISTI # SI7956DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7956DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.5900 6000:$1.5900 12000:$1.4900 18000:$1.4900 30000:$1.3900
SI7956DP-T1-E3 DISTI # 57J5757	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.1A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:20V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$1.6400 2000:$1.5700 4000:$1.4700 8000:$1.3600 12000:$1.3100 20000:$1.2900
SI7956DP-T1-E3 DISTI # 781-SI7956DP-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$3.2000 10:$2.6500 100:$2.1800 250:$2.1100 500:$1.9000 1000:$1.6000 3000:$1.5200
SI7956DP-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -
SI7956DP-T1-E3 DISTI # C1S803601298506	Vishay Intertechnologies	MOSFETs	5440	250:$2.0150 100:$2.1320 25:$2.4070 10:$2.4880 1:$2.7530

Image	Part #	Description
	Mfr.#: SI7956DP-T1-GE3 OMO.#: OMO-SI7956DP-T1-GE3	MOSFET 150V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7956DP-T1-E3 OMO.#: OMO-SI7956DP-T1-E3	MOSFET 150V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7956DP-T1-E3 OMO.#: OMO-SI7956DP-T1-E3-VISHAY	RF Bipolar Transistors MOSFET DUAL N-CH 150V (D-S)
	Mfr.#: SI7956DP-T1-GE3 OMO.#: OMO-SI7956DP-T1-GE3-VISHAY	MOSFET 2N-CH 150V 2.6A PPAK SO-8

SI7956DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes