SI7956DP-T1-GE3

Mfr. #:: SI7956DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI7956DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI7956DP-T1-GE3 Datasheet SI7956DP-T1-GE3 Datasheet (P4-P6)SI7956DP-T1-GE3 Datasheet (P7-P9)SI7956DP-T1-GE3 Datasheet (P10-P12)
ECAD Model:
More Information:: SI7956DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 4.1 A

Rds On - Drain-Source Resistance:: 105 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 26 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.5 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.04 mm

Length:: 6.15 mm

Series:: SI7

Transistor Type:: 2 N-Channel

Width:: 5.15 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 10 S

Fall Time:: 18 ns

Product Type:: MOSFET

Rise Time:: 13 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 36 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: SI7956DP-GE3

Unit Weight:: 0.017870 oz

Tags: SI795, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7956DP-T1-GE3 Description

***ure Electronics: Si7956DP Series 150 V 0.105 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8

***et Europe: Transistor MOSFET Array Dual N-CH 150V 2.6A 8-Pin PowerPAK SO T/R

***ark: MOSFET, DUAL N CH, 150V, 2.6A, POWERPAK; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V ;RoHS Compliant: Yes

SI7956DP-T1-GE3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI7956DP-T1-GE3 DISTI # V72:2272_09216420	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	401	250:$2.0930 100:$2.1620 25:$2.3630 10:$2.6250 1:$3.4815
SI7956DP-T1-GE3 DISTI # V36:1790_09216420	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000000:$1.5540 1500000:$1.5550 300000:$1.5710 30000:$1.5890 3000:$1.5920
SI7956DP-T1-GE3 DISTI # SI7956DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12732In Stock	1000:$1.7261 500:$2.0466 100:$2.4042 10:$2.9340 1:$3.2700
SI7956DP-T1-GE3 DISTI # SI7956DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12732In Stock	1000:$1.7261 500:$2.0466 100:$2.4042 10:$2.9340 1:$3.2700
SI7956DP-T1-GE3 DISTI # SI7956DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	6000:$1.5322 3000:$1.5920
SI7956DP-T1-GE3 DISTI # 27179216	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	401	5:$3.4815
SI7956DP-T1-GE3 DISTI # 30619055	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	90	7:$3.9500
SI7956DP-T1-GE3 DISTI # SI7956DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R (Alt: SI7956DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	500:€1.1900 1000:€1.1900 50:€1.2900 100:€1.2900 25:€1.3900 10:€1.7900 1:€2.4900
SI7956DP-T1-GE3 DISTI # SI7956DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7956DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.3900 12000:$1.4900 18000:$1.4900 3000:$1.5900 6000:$1.5900
SI7956DP-T1-GE3 DISTI # 15R5235	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 150V, 2.6A, POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes	0	20000:$1.4100 12000:$1.4300 8000:$1.4900 4000:$1.6000 2000:$1.7100 1:$1.7900
SI7956DP-T1-GE3 DISTI # 18X0028	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 150V, 2.6A, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	1000:$1.7900 500:$2.2600 250:$2.6000 100:$2.8800 50:$3.1400 25:$3.3300 1:$3.5600
SI7956DP-T1-GE3 DISTI # 781-SI7956DP-GE3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	2525	1:$3.1900 10:$2.6400 100:$2.1700 250:$2.1000 500:$1.8900 1000:$1.5900 3000:$1.5100
SI7956DP-T1-GE3 DISTI # 1807324	Vishay Intertechnologies	DUAL N-CH POWERPAK SO-8 150V 105MOHM @ 1, RL	3000	9000:£1.1800 6000:£1.2200 3000:£1.2600
SI7956DP-T1-GE3 DISTI # C1S803604978083	Vishay Intertechnologies	MOSFETs RoHS: Compliant	90	50:$2.0400 10:$2.5300 1:$3.1600
SI7956DP-T1-GE3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8	Americas -	3000:$1.5620 6000:$1.4600 12000:$1.4060

Related products

Image	Part #	Description
	Mfr.#: OPA197IDBVT OMO.#: OMO-OPA197IDBVT	Precision Amplifiers 36-V, Precision, Rail-to-Rail Input Output, Low Offset Voltage Op Amp 5-SOT-23 -40 to 125
	Mfr.#: ADP1763ACPZ-R7 OMO.#: OMO-ADP1763ACPZ-R7	LDO Voltage Regulators 3ALowVin VeryLow DO low noise high PSSR
	Mfr.#: FA26X7S2A155KRU00 OMO.#: OMO-FA26X7S2A155KRU00	Multilayer Ceramic Capacitors MLCC - Leaded 100V 1.5uF X7S 10% RAD LS:5mm AEC-Q200
	Mfr.#: OPA197IDBVT OMO.#: OMO-OPA197IDBVT-TEXAS-INSTRUMENTS	Precision Amplifiers 36-V, Precision, Rail-to-Rail Input Output, Low Offset Voltage Op Amp 5-SOT-23 -40 to 125
	Mfr.#: ADP1763ACPZ-R7 OMO.#: OMO-ADP1763ACPZ-R7-ANALOG-DEVICES-INC-ADI	LDO Voltage Regulators 3ALowVin VeryLow DO low noise high PSSR
	Mfr.#: CGA6M3X7S2A475K200AB OMO.#: OMO-CGA6M3X7S2A475K200AB-TDK	Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 4.7uF 100volts X7S +/-10%
	Mfr.#: CC0603JRX7R9BB104 OMO.#: OMO-CC0603JRX7R9BB104-YAGEO	Multilayer Ceramic Capacitors MLCC - SMD/SMT .1uF 50V X7R 5%

Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of SI7956DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.19~~; ~~$3.19~~

10: ~~$2.64~~; ~~$26.40~~

100: ~~$2.17~~; ~~$217.00~~

250: ~~$2.10~~; ~~$525.00~~

500: ~~$1.89~~; ~~$945.00~~

1000: ~~$1.59~~; ~~$1 590.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI795 9
SI79 142
SI7 1547

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
Compare SI7956DP-T1-GE3

SI7956DPT1E3 vs SI7956DPT1GE3 vs SI7958AD
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SI7956DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes