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SI7956DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 72960
S09-0223-Rev. B, 09-Feb-09
Vishay Siliconix
Si7956DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 1.2
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- T emperature ( °C)
Single Pulse Power
0
60
100
20
40
Power (W)
80
100 6000.010.001
1
100.1
Time (s)
Safe Operating Area, Junction-to-Ambient
100 ms
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
I
DM
Limited
I
D(on)
Limited
Limited by R
DS(on)
*
BVDSS Limited
10 s
1 s
10 ms
1 ms
100 µs
DC
* V
GS
minimum V
GS
at which R
DS(on)
is specified
>
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 1 0 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 60 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 72960
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
5
Vishay Siliconix
Si7956DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72960
.
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
1
0.1
0.01
0.2
0.1
0.05
Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single
Package Information
www.vishay.com
Vishay Siliconix
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK
®
SO-8, (Single/Dual)
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 - 0.05 0 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4 0.57 typ. 0.0225 typ.
D5 3.98 typ. 0.157 typ.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4 0.75 typ. 0.030 typ.
e 1.27 BSC 0.050 BSC
K 1.27 typ. 0.050 typ.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
3.
Dimensions exclusive of mold flash and cutting burrs.
1.
Notes
2
Inch will govern.
Dimensions exclusive of mold gate burrs.
Backside View of Single Pad
Backside View of Dual Pad
Detail Z
D
D1
D2
c
θ
A
θ
E1
θ
D1
E2
D2
e
b
1
2
3
4
H
4
3
2
1
θ
1
2
3
4
b
L
D2
D3 (2x)
Z
A1
K1
K
D
E
W
L1
D5
E3
D4
E4
E4
K
L
H
E2
D4
D5
M
E3
2
2
P1-P3P4-P6P7-P9P10-P12

SI7956DP-T1-GE3

Mfr. #:
Buy SI7956DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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