SI7956DP-T1-GE3 Datasheet SI7956DP-T1-GE3, SI7956DP-T1-E3 | P1-P3

Vishay Siliconix

Si7956DP

Document Number: 72960

S09-0223-Rev. B, 09-Feb-09

www.vishay.com

1

Dual N-Channel 150-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• Low On-Resistance in New Low Thermal

Resistance PowerPAK

®

Package

• Dual MOSFET for Space Savings

• 100 % R

g

Tested

APPLICATIONS

• High Efficiency Primary Side Switches

• Half Bridge and Forward Converters

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

150

0.105 at V

GS

= 10 V

4.1

0.115 at V

GS

= 6 V

3.9

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK SO-8

Si7956DP-T1-E3 (Lead (Pb)-free)

Si7956DP-T1-GE3

(

Lead

(

Pb

)

-free and Halo

g

en-free

)

Ordering Information:

N-Channel MOSFET

D

1

G

1

S

1

N-Channel MOSFE

T

D

2

G

2

S

2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

150

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

4.1 2.6

A

T

A

= 70 °C

3.3 2.1

Pulsed Drain Current

I

DM

20

Continuous Source Current (Diode Conduction)

a

I

S

2.9 1.2

Single Avalanche Current L = 0.1 mH

I

AS

15

Single Avalanche Energy

E

AS

11 mJ

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

3.5 1.4

W

T

A

= 70 °C

2.2 0.9

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b,c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

26 35

°C/WSteady State 60 85

Maximum Junction-to-Case (Drain) Steady State

R

thJC

2.2 2.7

www.vishay.com

2

Document Number: 72960

S09-0223-Rev. B, 09-Feb-09

Vishay Siliconix

Si7956DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2 3.1 4.0 V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V ± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 150 V, V

GS

= 0 V 1

µA

V

DS

= 150 V, V

GS

= 0 V, T

J

= 55 °C 5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V 20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 4.1 A 0.088 0.105

Ω

V

GS

= 6 V, I

D

= 3.9 A 0.096 0.115

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 4.1 A 10 S

Diode Forward Voltage

a

V

SD

I

S

= 2.9 A, V

GS

= 0 V 0.77 1.2 V

Dynamic

b

Total Gate Charge Q

g

V

DS

= 75 V, V

GS

= 10 V, I

D

= 4.1 A

17 26

nC

Gate-Source Charge Q

gs

3.9

Gate-Drain Charge Q

gd

5.5

Gate Resistance R

g

123Ω

Tur n - O n D e l ay Time t

d(on)

V

DD

= 75 V, R

L

= 75 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

G

= 6 Ω

14 22

ns

Rise Time t

r

13 22

Turn-Off Delay Time t

d(off)

36 58

Fall Time t

f

18 30

Source-Drain Reverse Recovery Time t

rr

I

F

= 2.9 A, dI/dt = 100 A/µs 50 75

Output Characteristics

0

4

8

12

16

20

012345

5 V

V

DS

- Drain-to-Source Voltage (V)

I - Drain Current (A)

D

4 V

V

GS

= 10 V thru 6 V

Transfer Characteristics

0

4

8

12

16

20

0123456

V

GS

- Gate-to-Source Voltage (V)

I - Drain Current (A)

D

T

C

= 125 °C

25 °C

-55 °C

Document Number: 72960

S09-0223-Rev. B, 09-Feb-09

www.vishay.com

3

Vishay Siliconix

Si7956DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.00

0.04

0.08

0.12

0.16

0

.

20

0 4 8 12 16 20

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 6 V

0

2

4

6

8

10

0 4 8 12 16 20

V

DS

= 75 V

I

D

= 4.1 A

V - Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T

J

= 150 °C

20

10

0.1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

1

T

J

= 25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

300

600

900

1200

1500

0 1020304050607080

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C - Capacitance (pF)

C

iss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2

.

0

- 50 - 25 0 2 5 5 0 7 5 100 125 150

V

GS

= 10 V

I

D

= 4.1 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

0.00

0.04

0.08

0.12

0.16

0

.

20

02468 10

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

I

D

= 4.1 A

SI7956DP-T1-GE3

SI7956DP-T1-GE3

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