MAT03EHZ

MAT03EHZ
Mfr. #:
MAT03EHZ
Manufacturer:
Analog Devices Inc.
Description:
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
Lifecycle:
New from this manufacturer.
Datasheet:
MAT03EHZ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MAT03EHZ more Information MAT03EHZ Product Details
Product Attribute
Attribute Value
Manufacturer:
Analog Devices Inc.
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Package / Case:
TO-78-6
Transistor Polarity:
PNP
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
36 V
Collector- Base Voltage VCBO:
36 V
Collector-Emitter Saturation Voltage:
100 mV
Maximum DC Collector Current:
20 mA
Gain Bandwidth Product fT:
190 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 125 C
Series:
MAT03
Height:
4.7 mm (Max)
Length:
9.4 mm (Max)
Packaging:
Bulk
Width:
9.4 mm (Max)
Brand:
Analog Devices
DC Collector/Base Gain hfe Min:
80 at 10 uA, 36 V
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Tags
MAT03, MAT0, MAT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
***ical
Trans GP BJT PNP 36V 0.02A 6-Pin TO-78 Tube
***log Devices
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ohm) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter break-down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
Part # Mfg. Description Stock Price
MAT03EHZ
DISTI # MAT03EHZ-ND
Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    MAT03EH
    DISTI # 584-MAT03EH
    Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
    RoHS: Not compliant
    0
      MAT03EHZ
      DISTI # 584-MAT03EHZ
      Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
      RoHS: Compliant
      0
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        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of MAT03EHZ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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