PD20010-E

PD20010-E
Mfr. #:
PD20010-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F.
Lifecycle:
New from this manufacturer.
Datasheet:
PD20010-E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD20010-E DatasheetPD20010-E Datasheet (P4-P6)PD20010-E Datasheet (P7-P9)PD20010-E Datasheet (P10-P12)PD20010-E Datasheet (P13)
ECAD Model:
More Information:
PD20010-E more Information PD20010-E Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
5 A
Vds - Drain-Source Breakdown Voltage:
40 V
Gain:
11 dB
Output Power:
10 W
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
PowerSO-10RF-Formed-4
Packaging:
Tube
Configuration:
Single
Height:
3.5 mm
Length:
7.5 mm
Operating Frequency:
2 GHz
Series:
PD20010-E
Type:
RF Power MOSFET
Width:
9.4 mm
Brand:
STMicroelectronics
Channel Mode:
Enhancement
Moisture Sensitive:
Yes
Pd - Power Dissipation:
59 W
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
15 V
Unit Weight:
0.105822 oz
Tags
PD20010, PD2001, PD200, PD20, PD2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 40V 5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***ark
Rf Transistor, 40V, 2Ghz, Powerso-10Rf; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5A; Power Dissipation Pd:59W; Operating Frequency Min:-; Operating Frequency Max:2Ghz; Rf Transistor Case:powerso-10Rf; Product Range:-Rohs Compliant: Yes
Part # Mfg. Description Stock Price
PD20010-E
DISTI # 26562460
STMicroelectronicsTrans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant
200
  • 1000:$11.6021
  • 500:$12.6504
  • 250:$13.5173
  • 100:$14.2128
  • 25:$16.1381
  • 10:$16.8336
  • 1:$18.3053
PD20010-E
DISTI # 497-13044-5-ND
STMicroelectronicsTRANS RF N-CH FET POWERSO-10RF
RoHS: Compliant
Min Qty: 1
Container: Tube
496In Stock
  • 500:$12.5425
  • 100:$14.0995
  • 50:$16.0026
  • 1:$18.1700
PD20010-E
DISTI # C1S730200530721
STMicroelectronicsTrans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant
200
  • 100:$13.2000
  • 50:$15.9000
  • 25:$17.2000
  • 10:$18.7000
  • 5:$19.2000
  • 1:$25.6000
PD20010-E
DISTI # PD20010-E
STMicroelectronicsTrans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD20010-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$12.8900
  • 800:$12.2900
  • 1600:$11.7900
  • 2400:$11.1900
  • 4000:$10.9900
PD20010-E
DISTI # 45AC7466
STMicroelectronicsTrans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bulk (Alt: 45AC7466)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$22.8200
  • 10:$21.3000
  • 25:$20.5800
  • 50:$19.5900
  • 100:$18.5900
  • 250:$17.8700
  • 500:$16.9700
PD20010-E
DISTI # 45AC7466
STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF,Drain Source Voltage Vds:40V,Continuous Drain Current Id:5A,Power Dissipation Pd:59W,Operating Frequency Min:-,Operating Frequency Max:2GHz,RF Transistor Case:PowerSO-10RF,Product Range:-, RoHS Compliant: Yes100
  • 1:$22.8200
  • 10:$21.3000
  • 25:$20.5800
  • 50:$19.5900
  • 100:$18.5900
  • 250:$17.8700
  • 500:$16.9700
PD20010-E
DISTI # 511-PD20010-E
STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant
325
  • 1:$18.1600
  • 10:$16.7000
  • 25:$16.0100
  • 100:$14.1000
  • 250:$13.4100
  • 500:$12.5500
PD20010TR-E
DISTI # 511-PD20010TR-E
STMicroelectronicsRF MOSFET Transistors RF power tran LdmoST N-chann
RoHS: Compliant
0
  • 600:$12.5500
PD20010-E
DISTI # PD20010-E
STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 400:$12.5600
  • 500:$11.8900
  • 1000:$11.2800
PD20010-E
DISTI # 2807337
STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant
271
  • 1:£13.9100
  • 5:£13.6400
  • 10:£12.4100
  • 50:£11.5000
  • 100:£10.5800
PD20010-E
DISTI # 2807337
STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant
271
  • 1:$28.7500
  • 50:$25.3300
  • 100:$22.3200
  • 500:$19.8500
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Mfr.#: GMR100HTBFA10L0

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Availability
Stock:
276
On Order:
2259
Enter Quantity:
Current price of PD20010-E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$18.16
$18.16
10
$16.70
$167.00
25
$16.01
$400.25
100
$14.10
$1 410.00
250
$13.41
$3 352.50
500
$12.55
$6 275.00
1000
$11.51
$11 510.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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