PartNumber | PD20010-E | PD20010S-E | PD20010STR-E |
Description | RF MOSFET Transistors POWER R.F. | RF MOSFET Transistors POWER R.F. | RF MOSFET Transistors RF power tran LdmoST N-chann |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Id Continuous Drain Current | 5 A | 5 A | 5 A |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Gain | 11 dB | 11 dB | 11 dB |
Output Power | 10 W | 10 W | 10 W |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerSO-10RF-Formed-4 | PowerSO-10RF-Straight-4 | PowerSO-10RF-Straight-4 |
Packaging | Tube | Tube | Reel |
Configuration | Single | Single | Single |
Height | 3.5 mm | 3.5 mm | - |
Length | 7.5 mm | 7.5 mm | - |
Operating Frequency | 2 GHz | 2 GHz | 2 GHz |
Series | PD20010-E | PD20010-E | PD20010-E |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Width | 9.4 mm | 9.4 mm | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Channel Mode | Enhancement | Enhancement | - |
Moisture Sensitive | Yes | Yes | Yes |
Pd Power Dissipation | 59 W | 59 W | 59 W |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 400 | 400 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | 15 V | 15 V | 15 V |
Unit Weight | 0.105822 oz | 0.105822 oz | 0.105822 oz |