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FGL60N100BNTDTU

FGL60N100BNTDTU
Mfr. #:
FGL60N100BNTDTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors HIGH POWER
Lifecycle:
New from this manufacturer.
Datasheet:
FGL60N100BNTDTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-264-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1000 V
Collector-Emitter Saturation Voltage:
1.5 V
Maximum Gate Emitter Voltage:
25 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
180 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
FGL60N100BNTD
Packaging:
Tube
Continuous Collector Current Ic Max:
60 A
Height:
26 mm
Length:
20 mm
Width:
5 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
60 A
Gate-Emitter Leakage Current:
+/- 500 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
375
Subcategory:
IGBTs
Part # Aliases:
FGL60N100BNTDTU_NL
Unit Weight:
0.238311 oz
Tags
FGL60N100BNTDT, FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, igbt, n-Chan+Diode, 1Kv V(Br)Ces, 42A I(C), to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Part # Mfg. Description Stock Price
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
  • 375:$4.0482
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 50:€1.9900
  • 100:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.2900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 109
Container: Bulk		Americas - 0
  • 1090:$2.7900
  • 218:$2.8900
  • 327:$2.8900
  • 545:$2.8900
  • 109:$2.9900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 3750:$2.4900
  • 750:$2.5900
  • 1500:$2.5900
  • 2250:$2.5900
  • 375:$2.6900
FGL60N100BNTDTU
DISTI # 60J0636		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes0
  • 500:$2.3600
  • 250:$2.4300
  • 100:$2.9100
  • 50:$3.3600
  • 25:$3.5800
  • 10:$4.0900
  • 1:$4.7200
FGL60N100BNTDTU
DISTI # 512-FGL60N100BNTDTU		ON SemiconductorIGBT Transistors HIGH POWER
RoHS: Compliant		0
    FGL60N100BNTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
    RoHS: Compliant    		25
    • 1000:$3.0300
    • 500:$3.1900
    • 100:$3.3200
    • 25:$3.4600
    • 1:$3.7300
    Image Part # Description
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTD

    Mfr.#: FGL60N100BNTD

    OMO.#: OMO-FGL60N100BNTD-ON-SEMICONDUCTOR

    		 IGBT 1000V 60A 180W TO264
    FGL60N100ANTD

    Mfr.#: FGL60N100ANTD

    OMO.#: OMO-FGL60N100ANTD-1190

    		 New and Original
    FGL60N100BNTD,FGL40N120A

    Mfr.#: FGL60N100BNTD,FGL40N120A

    OMO.#: OMO-FGL60N100BNTD-FGL40N120A-1190

    		 New and Original
    FGL60N100BNTDU

    Mfr.#: FGL60N100BNTDU

    OMO.#: OMO-FGL60N100BNTDU-1190

    		 New and Original
    FGL60N100D

    Mfr.#: FGL60N100D

    OMO.#: OMO-FGL60N100D-1190

    		 New and Original
    FGL60N170

    Mfr.#: FGL60N170

    OMO.#: OMO-FGL60N170-1190

    		 New and Original
    FGL60N170BNTD

    Mfr.#: FGL60N170BNTD

    OMO.#: OMO-FGL60N170BNTD-1190

    		 New and Original
    FGL60N170N

    Mfr.#: FGL60N170N

    OMO.#: OMO-FGL60N170N-1190

    		 New and Original
    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of FGL60N100BNTDTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    375
    $3.15
    $1 181.25
    750
    $2.83
    $2 122.50
    1125
    $2.39
    $2 688.75
    2625
    $2.27
    $5 958.75
    5250
    $2.18
    $11 445.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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