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SIR808DP-T1-GE3

SIR808DP-T1-GE3
Mfr. #:
SIR808DP-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts
Lifecycle:
New from this manufacturer.
Datasheet:
SIR808DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
IC Chips
Series
SIRxxxDP
Packaging
Reel
Part-Aliases
SIR808DP-GE3
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
SO-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
29.8 W
Fall-Time
7 ns
Rise-Time
10 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
20 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Rds-On-Drain-Source-Resistance
7.4 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
14 ns
Typical-Turn-On-Delay-Time
5 ns
Qg-Gate-Charge
15.2 nC
Forward-Transconductance-Min
36 S
Tags
SIR808, SIR80, SIR8, SIR
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, DIO, 25V, 20A, PPK SO8; Transistor Polarity:N Channel; Continuous
***et
N-CH POWERPAK SO-8 BWL 25V 7.4 MOHM@10V
***nell
MOSFET, N CH, DIO, 25V, 20A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Part # Mfg. Description Stock Price
SIR808DP-T1-GE3
DISTI # SIR808DP-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 25V 20A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIR808DP-T1-GE3
    DISTI # 78-SIR808DP-T1-GE3    		Vishay IntertechnologiesMOSFET 25 Volts 20 Amps 29.8 Watts
    RoHS: Compliant    		0
      Image Part # Description
      SIR808DP-T1-GE3

      Mfr.#: SIR808DP-T1-GE3

      OMO.#: OMO-SIR808DP-T1-GE3

      		 MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
      SIR808DP-T1-GE3

      Mfr.#: SIR808DP-T1-GE3

      OMO.#: OMO-SIR808DP-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts
      SIR808DP

      Mfr.#: SIR808DP

      OMO.#: OMO-SIR808DP-1190

      		 New and Original
      SIR808DP-T1-E3

      Mfr.#: SIR808DP-T1-E3

      OMO.#: OMO-SIR808DP-T1-E3-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of SIR808DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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