SIR808DP-T1-GE3

SIR808DP-T1-GE3
Mfr. #:
SIR808DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SIR808DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR808DP-T1-GE3 DatasheetSIR808DP-T1-GE3 Datasheet (P4-P6)SIR808DP-T1-GE3 Datasheet (P7-P9)SIR808DP-T1-GE3 Datasheet (P10-P12)SIR808DP-T1-GE3 Datasheet (P13)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SIR
Width:
5.15 mm
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SIR808DP-GE3
Unit Weight:
0.017870 oz
Tags
SIR808, SIR80, SIR8, SIR
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, DIO, 25V, 20A, PPK SO8; Transistor Polarity:N Channel; Continuous
***et
N-CH POWERPAK SO-8 BWL 25V 7.4 MOHM@10V
***nell
MOSFET, N CH, DIO, 25V, 20A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Part # Mfg. Description Stock Price
SIR808DP-T1-GE3
DISTI # SIR808DP-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 25V 20A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIR808DP-T1-GE3
    DISTI # 78-SIR808DP-T1-GE3
    Vishay IntertechnologiesMOSFET 25 Volts 20 Amps 29.8 Watts
    RoHS: Compliant
    0
      Image Part # Description
      SIR808DP-T1-GE3

      Mfr.#: SIR808DP-T1-GE3

      OMO.#: OMO-SIR808DP-T1-GE3

      MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
      SIR808DP-T1-GE3

      Mfr.#: SIR808DP-T1-GE3

      OMO.#: OMO-SIR808DP-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts
      SIR808DP

      Mfr.#: SIR808DP

      OMO.#: OMO-SIR808DP-1190

      New and Original
      SIR808DP-T1-E3

      Mfr.#: SIR808DP-T1-E3

      OMO.#: OMO-SIR808DP-T1-E3-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of SIR808DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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