SIR808DP-T1-GE3 Datasheet SIR808DP-T1-GE3 | P1-P3

Vishay Siliconix

SiR808DP

Document Number: 67515

S11-0614-Rev. A, 04-Apr-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 25 V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()

I

D

(A)

a, g

Q

g

(Typ.)

25

0.0089 at V

GS

= 10 V

20

7.5 nC

0.0119 at V

GS

= 4.5 V

20

Ordering Information: SiR808DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Base on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

25

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

20

g

A

T

C

= 70 °C

20

g

T

A

= 25 °C

17

b, c

T

A

= 70 °C

13

b, c

Pulsed Drain Current (t = 300 µs)

I

DM

50

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

20

g

T

A

= 25 °C

3.2

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

21

Avalanche Energy

E

AS

22

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

29.8

W

T

C

= 70 °C

19

T

A

= 25 °C

3.9

b, c

T

A

= 70 °C

2.5

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  10 s

R

thJA

27 32

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

3.5 4.2

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

• Optimized for High-Side Synchronous

Rectifier Operation

• 100 % R

g

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Synchronous Buck Converter

- High-Side Switch

• High Frequency Switching

www.vishay.com

2

Document Number: 67515

S11-0614-Rev. A, 04-Apr-11

Vishay Siliconix

SiR808DP

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

25 V

V

DS

Temperature Coefficient

V

DS

/T

J

I

D

= 250 µA

25

mV/°C

V

GS(th)

Temperature Coefficient

V

GS(th)

/T

J

- 4.6

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.0 2.5 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 25 V, V

GS

= 0 V

1

µA

V

DS

= 25 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

5 V, V

GS

= 10 V

20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 17 A

0.0074 0.0089



V

GS

= 4.5 V, I

D

= 15 A

0.0095 0.0119

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 17 A

36 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 12.5 V, V

GS

= 0 V, f = 1 MHz

815

pFOutput Capacitance

C

oss

220

Reverse Transfer Capacitance

C

rss

90

Total Gate Charge

Q

g

V

DS

= 12.5 V, V

GS

= 10 V, I

D

= 17 A

15.2 22.8

nC

V

DS

= 12.5 V, V

GS

= 4.5 V, I

D

= 17 A

7.5 11.3

Gate-Source Charge

Q

gs

2.3

Gate-Drain Charge

Q

gd

2.1

Gate Resistance

R

g

f = 1 MHz 0.3 1.3 2.6 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 12.5 V, R

L

= 1.25 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

20 30

ns

Rise Time

t

r

34 51

Turn-Off Delay Time

t

d(off)

19 29

Fall Time

t

f

918

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= 12.5 V, R

L

= 1.25 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

510

Rise Time

t

r

10 20

Turn-Off Delay Time

t

d(off)

14 21

Fall Time

t

f

714

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

20

A

Pulse Diode Forward Current

a

I

SM

50

Body Diode Voltage

V

SD

I

S

= 10 A

0.85 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

23 35 ns

Body Diode Reverse Recovery Charge

Q

rr

11 20 nC

Reverse Recovery Fall Time

t

a

11

ns

Reverse Recovery Rise Time

t

b

12

Document Number: 67515

S11-0614-Rev. A, 04-Apr-11

www.vishay.com

3

Vishay Siliconix

SiR808DP

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

50

00.511.52

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 10 V thru 4 V

V

GS

= 3 V

0.003

0.006

0.009

0.012

0.015

0 1020304050

R

DS(on)

- On-Resistance (Ω)

I

D

-Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0481216

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 20 V

V

DS

= 13 V

V

DS

= 6 V

I

D

= 17 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

00.61.21.82.43

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= - 55 °C

T

C

= 25 °C

T = 125 °C

C

0

275

550

825

1100

0 5 10 15 20 25

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.7

0.9

1.1

1.3

1.5

1.7

-50 -25 0 25 50 75 100 125 150

R

DS(on)

-On-Resistance

(Normalized)

T

J

- Junction Temperature (°C)

I

D

= 17 A

V

GS

= 4.5 V

V

GS

= 10 V

SIR808DP-T1-GE3

SIR808DP-T1-GE3

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