We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1 | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 - Bulk (Alt: BSP299L6327HUSA1) Min Qty: 658 Container: Bulk | Americas - 0 |
|
| BSP299 L6327 DISTI # 726-BSP299L6327 | Infineon Technologies AG | MOSFET N-Ch 500V 400mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP299L6327HUSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 324000 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSP299L6327 OMO.#: OMO-BSP299L6327-1190 |
Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP299L6327HUSA1 |
MOSFET N-CH 500V 400MA SOT-223 |
|
|
Mfr.#: BSP299L6327XT OMO.#: OMO-BSP299L6327XT-1190 |
New and Original |
