IRF6636TRPBF

Mfr. #:: IRF6636TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST)
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6636TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6636TRPBF Datasheet IRF6636TRPBF Datasheet (P4-P6)IRF6636TRPBF Datasheet (P7-P9)IRF6636TRPBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-ST

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 18 A

Rds On - Drain-Source Resistance:: 4.6 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 18 nC

Pd - Power Dissipation:: 42 W

Configuration:: Single

Packaging:: Reel

Height:: 0.7 mm

Length:: 4.85 mm

Transistor Type:: 1 N-Channel

Width:: 3.95 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 4800

Subcategory:: MOSFETs

Part # Aliases:: SP001529234

Tags: IRF6636T, IRF6636, IRF663, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6636TRPBF Description

***(Formerly Allied Electronics): A 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET (ST) PACKAGERATED AT 8

*** Source Electronics: Trans MOSFET N-CH Si 20V 18A 7-Pin Direct-FET ST T/R / Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce | MOSFET N-CH 20V 18A DIRECTFET

***ernational Rectifier: A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***nell: MOSFET, N-CH, 20V, 81A, DIRECTFET ST; Transistor Polarity: N Channel; Continuous Drain Current Id: 81A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.45V; Power Dissipation Pd: 42W; Transistor Case Style: DirectFET ST; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans MOSFET N-CH Si 25V 19A 6-Pin Direct-FET SQ T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ineon: Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 4.5Milliohms;ID 93A;D-Pak (TO-252AA);PD 79W

***ure Electronics: Single N-Channel 20 V 5.7 mOhm 27 nC HEXFET® Power Mosfet - TO-252-3

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N-CH, 20V, 93A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 93A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***peria: PSMN3R2-25YLC - N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology

***ical: Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R

***el Electronic: IC GATE DRVR LOW-SIDE 32TQFP

***emi: Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK

***r Electronics: Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-DPAK ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.2Milliohms;ID 100A;D-Pak (TO-252AA);-55de

***ure Electronics: Single N-Channel 20 V 6.5 mOhm 29 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK RoHS Compliant: Yes

***-Wing Technology: Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 12A Ta 85A Tc 85A 2.4W 12ns

***emi: Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:85A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:78.1W ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IRF6636TRPBF DISTI # 31337171	Infineon Technologies AG	Trans MOSFET N-CH Si 20V 18A 7-Pin Direct-FET ST T/R	4800	4800:$0.7268
IRF6636TRPBF DISTI # IRF6636TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 20V 18A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7698In Stock	1000:$0.8132 500:$0.9815 100:$1.2619 10:$1.5700 1:$1.7400
IRF6636TRPBF DISTI # IRF6636TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 18A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7698In Stock	1000:$0.8132 500:$0.9815 100:$1.2619 10:$1.5700 1:$1.7400
IRF6636TRPBF DISTI # IRF6636TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 20V 18A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	4800In Stock	4800:$0.7242
IRF6636TRPBF DISTI # C1S322000482063	Infineon Technologies AG	MOSFETs	4800	4800:$0.7560
IRF6636TRPBF DISTI # IRF6636TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 20V 18A 7-Pin Direct-FET ST T/R - Tape and Reel (Alt: IRF6636TRPBF) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	4800:$0.7129 9600:$0.6869 19200:$0.6619 28800:$0.6399 48000:$0.6279
IRF6636TRPBF DISTI # IRF6636TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 20V 18A 7-Pin Direct-FET ST T/R (Alt: IRF6636TRPBF) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Asia - 0	4800:$0.6429 9600:$0.6250 14400:$0.6081 24000:$0.5921 48000:$0.5844 120000:$0.5769 240000:$0.5696
IRF6636TRPBF DISTI # 70019576	Infineon Technologies AG	A 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET (ST) PACKAGERATED AT 8 RoHS: Compliant	0	4800:$1.3060 9600:$1.2800 24000:$1.2410
IRF6636TRPBF DISTI # 942-IRF6636TRPBF	Infineon Technologies AG	MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) RoHS: Compliant	4800	1:$1.6300 10:$1.3900 100:$1.0700 500:$0.9410 1000:$0.7430 2500:$0.6590
IRF6636TRPBF DISTI # 2579983	Infineon Technologies AG	MOSFET, N-CH, 20V, 81A, DIRECTFET ST RoHS: Compliant	4800	5:£1.2900 25:£1.1200 100:£0.8640 250:£0.8110 500:£0.7590
IRF6636TRPBF DISTI # 2579983	Infineon Technologies AG	MOSFET, N-CH, 20V, 81A, DIRECTFET ST RoHS: Compliant	4800	1:$2.7800 10:$2.5100 100:$2.0200 500:$1.5700 1000:$1.3000

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of IRF6636TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.62~~; ~~$1.62~~

10: ~~$1.38~~; ~~$13.80~~

100: ~~$1.06~~; ~~$106.00~~

500: ~~$0.94~~; ~~$470.50~~

1000: ~~$0.74~~; ~~$743.00~~

2500: ~~$0.66~~; ~~$1 647.50~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF6636TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes