IRFS4010-7PPBF

Mfr. #:: IRFS4010-7PPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 100V 190A 4.0mOhm 150nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFS4010-7PPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFS4010-7PPBF Datasheet IRFS4010-7PPBF Datasheet (P4-P6)IRFS4010-7PPBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 190 A

Rds On - Drain-Source Resistance:: 3.3 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 150 nC

Pd - Power Dissipation:: 380 W

Configuration:: Single

Packaging:: Tube

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Part # Aliases:: SP001552284

Unit Weight:: 0.056438 oz

Tags: IRFS4010-7, IRFS401, IRFS40, IRFS4, IRFS, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFS4010-7PPBF Description

*** Source Electronics: Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube / MOSFET N-CH 100V 190A D2PAK-7

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS

***(Formerly Allied Electronics): MOSFET, 100V, 190A, 4.0MOHM, 150NC QG, D2PAK-7

***ment14 APAC: MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9830pF; Current Id Max:190A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:740A; Reverse Recovery Time trr Typ:60ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***ark: N CH POWER MOSFET, HEXFET, 100V, 190A, D2PAK-7; Transistor Polarity:N Channel; C

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS

***ure Electronics: Single N-Channel 100 V 4 mOhm 230 nC HEXFET® Power Mosfet - D2PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R

***Yang: Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (

***ment14 APAC: MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Source Voltage Vds:100V; On Resistance

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***nell: MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 190A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans MOSFET N-CH 100V 190A Automotive 7-Pin(6+Tab) D2PAK Tube

***ernational Rectifier: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

***(Formerly Allied Electronics): Transistor MOSFET N-ch 100V 130A D2PAK-7

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3 Milliohms;ID 160A;D2Pak;PD 300W;VGS +/-20V

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a 7-lead D2-Pak Package, D2PAK7P, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ical: Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) D2PAK Tube

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:160A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

***Yang: Transistor MOSFET N-CH 100V 200A 7-Pin TO-263 T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET 100V, 200A, 3mΩ

***r Electronics: Power Field-Effect Transistor, 200A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

***nell: MOSFET, N-CH, 100V, 200A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***icroelectronics: Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET

***ical: Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R

*** Electronics: STMICROELECTRONICS STH315N10F7-6 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V

***nell: MOSFET, N CH, 100V, 180A, H2PAK-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V

***icroelectronics: N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package

***et: Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) H2PAK T/R

*** Source Electronics: MOSFET N-CH 75V 180A H2PAK / Conduction losses reduced

***r Electronics: Power Field-Effect Transistor, 180A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronic Components: MOSFET N-channel 75V 210A STripFET III

***ow.cn: STH240N75F3-6 STMicroelectronics Transistors MOSFETs N-CH 75V 180A 7-Pin(6+Tab) H2PAK T/R - Arrow.com

***icroelectronics SCT: Power MOSFETs, 75V, 180A, H2PAK-6, Tape and Reel

***S: French Electronic Distributor since 1988

***ponent Sense: QA-0096-0 TRS,SMT,H2PAK-6,N-CHANN POWER

***el Electronic: CAP CERAMIC DISK RDL SHORT LEADS

***ment14 APAC: MOSFET, N CH, 75V, 180A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:H2PAK-6; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +175°C

Market price

Part #	Mfg.	Description	Stock	Price
IRFS4010-7PPBF DISTI # IRFS4010-7PPBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 190A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRFS40107PPBF DISTI # SP001552284	Infineon Technologies AG	Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube (Alt: SP001552284) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€3.4900 10:€2.7900 25:€2.5900 50:€2.4900 100:€2.3900 500:€2.2900 1000:€2.2900
IRFS4010-7PPBF DISTI # 942-IRFS4010-7PPBF	Infineon Technologies AG	MOSFET MOSFT 100V 190A 4.0mOhm 150nC RoHS: Compliant	0
IRFS4010-7PPBF	International Rectifier	INSTOCK	3
IRFS4010-7PPBF DISTI # 1688589	Infineon Technologies AG	MOSFET, N-CH, 100V, D2PAK RoHS: Compliant	0	1:$8.1400 10:$7.3100 100:$5.9900

Image	Part #	Description
	Mfr.#: IRFS4010TRLPBF OMO.#: OMO-IRFS4010TRLPBF	MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
	Mfr.#: IRFS4010TRL7PP OMO.#: OMO-IRFS4010TRL7PP	MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg
	Mfr.#: IRFS4010-7PPBF OMO.#: OMO-IRFS4010-7PPBF	MOSFET MOSFT 100V 190A 4.0mOhm 150nC
	Mfr.#: IRFS4010TRRPBF OMO.#: OMO-IRFS4010TRRPBF	MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
	Mfr.#: IRFS4010TRL7PP OMO.#: OMO-IRFS4010TRL7PP-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 190A D2PAK-7
	Mfr.#: IRFS4010 OMO.#: OMO-IRFS4010-1190	New and Original
	Mfr.#: IRFS4010-7PPBF OMO.#: OMO-IRFS4010-7PPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 190A D2PAK-7
	Mfr.#: IRFS4010PBF OMO.#: OMO-IRFS4010PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 180A D2PAK
	Mfr.#: IRFS4010TRLPBF,FS4010 OMO.#: OMO-IRFS4010TRLPBF-FS4010-1190	New and Original
	Mfr.#: IRFS4010TRRPBF OMO.#: OMO-IRFS4010TRRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC

IRFS4010-7PPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes