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IRFS4010TRLPBF

IRFS4010TRLPBF
Mfr. #:
IRFS4010TRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFS4010TRLPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4010TRLPBF DatasheetIRFS4010TRLPBF Datasheet (P4-P6)IRFS4010TRLPBF Datasheet (P7-P9)IRFS4010TRLPBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
3.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
143 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
189 S
Fall Time:
77 ns
Product Type:
MOSFET
Rise Time:
86 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
21 ns
Part # Aliases:
SP001550124
Unit Weight:
0.139332 oz
Tags
IRFS4010TRLP, IRFS4010TRL, IRFS4010T, IRFS401, IRFS40, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Tronics LLC (USA)
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance
***roFlash
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
AUIRFS4010 N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK
***ical
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
***ment14 APAC
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK
***ment14 APAC
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***hard Electronics
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Part # Mfg. Description Stock Price
IRFS4010TRLPBF
DISTI # 26992941		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$1.6276
IRFS4010TRLPBF
DISTI # 31234198		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		100
  • 100:$3.5063
  • 50:$4.0927
  • 10:$4.8450
  • 6:$4.9088
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5163In Stock
  • 100:$3.4782
  • 10:$4.2420
  • 1:$4.7500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5163In Stock
  • 100:$3.4782
  • 10:$4.2420
  • 1:$4.7500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		3200In Stock
  • 800:$2.4709
IRFS4010TRLPBF
DISTI # C1S322000495207		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		100
  • 100:$2.7500
  • 50:$3.2100
  • 10:$3.8000
  • 1:$3.8500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 21
  • 1:$2.8900
  • 8:$2.8900
  • 20:$2.8900
  • 40:$2.8900
  • 100:$2.7900
  • 200:$2.6900
  • 400:$2.3900
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 32000
  • 800:$1.6900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
    IRFS4010TRLPBFInfineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
    RoHS: Compliant
    Container: Reel    		Americas - 0
      IRFS4010TRLPBF
      DISTI # 13AC9154      		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes145
      • 1:$3.9700
      • 10:$3.3700
      • 25:$3.2200
      • 50:$3.0800
      • 100:$2.9300
      • 250:$2.7800
      • 500:$2.4900
      IRFS4010TRLPBF.
      DISTI # 26AC0562      		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:375W,No. of Pins:3Pins RoHS Compliant: Yes0
      • 1:$2.0900
      • 1600:$1.9900
      • 3200:$1.8900
      • 8000:$1.7900
      IRFS4010TRLPBF
      DISTI # 70019745      		Infineon Technologies AGMOSFET,100V,180A,4.7 MOHM,143 NC QG,D2-PAK
      RoHS: Compliant      		0
      • 2:$5.7800
      IRFS4010TRLPBF
      DISTI # 942-IRFS4010TRLPBF      		Infineon Technologies AGMOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
      RoHS: Compliant      		3485
      • 1:$3.9700
      • 10:$3.3700
      • 100:$2.9300
      • 250:$2.7800
      • 500:$2.4900
      IRFS4010TRLPBF
      DISTI # 1300999P      		Infineon Technologies AGMOSFET HEXFET N-CH 100V 180A D2PAK, RL914
      • 10:£2.2100
      • 100:£1.8950
      • 500:£1.5100
      • 1000:£1.4550
      IRFS4010TRLPBF
      DISTI # 2725983      		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB
      RoHS: Compliant      		210
      • 1:£2.7000
      • 10:£2.2500
      • 100:£1.9400
      • 250:£1.8100
      • 500:£1.6900
      IRFS4010TRLPBF
      DISTI # 2725983      		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB
      RoHS: Compliant      		295
      • 1:$7.5800
      • 10:$6.7700
      • 100:$5.5500
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      Availability
      Stock:
      Available
      On Order:
      1986
      Enter Quantity:
      Current price of IRFS4010TRLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.97
      $2.97
      10
      $2.53
      $25.30
      100
      $2.19
      $219.00
      250
      $2.08
      $520.00
      500
      $1.86
      $930.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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