IRFS4010T

IRFS4010TRLPBF vs IRFS4010TRL7PP vs IRFS4010TRRPBF

 
PartNumberIRFS4010TRLPBFIRFS4010TRL7PPIRFS4010TRRPBF
DescriptionMOSFET MOSFT 100V 180A 4.7mOhm 143nC QgMOSFET MOSFT 100V 190A 4.0mOhm 150nC QgMOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYNY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-263-7TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current180 A190 A180 A
Rds On Drain Source Resistance3.9 mOhms3.3 mOhms4.7 mOhms
Vgs th Gate Source Threshold Voltage4 V-4 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge143 nC150 nC143 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation375 W380 W375 W
ConfigurationSingleSingleSingle
PackagingReelReelReel
Height2.3 mm4.4 mm2.3 mm
Length6.5 mm10 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm9.25 mm6.22 mm
BrandInfineon / IRInfineon TechnologiesInfineon / IR
Forward Transconductance Min189 S-189 S
Fall Time77 ns-77 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time86 ns-86 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns-100 ns
Typical Turn On Delay Time21 ns-21 ns
Part # AliasesSP001550124SP001557352SP001576222
Unit Weight0.139332 oz0.056438 oz0.139332 oz
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRFS4010TRLPBF MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
IRFS4010TRRPBF MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
Infineon Technologies
Infineon Technologies
IRFS4010TRL7PP MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg
IRFS4010TRL7PP MOSFET N-CH 100V 190A D2PAK-7
IRFS4010TRLPBF MOSFET N-CH 100V 180A D2PAK
IRFS4010TRRPBF RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
IRFS4010TRLPBF-CUT TAPE New and Original
IRFS4010TRLPBF,FS4010 New and Original
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