SI3441BDV-T1-E3

SI3441BDV-T1-E3
Mfr. #:
SI3441BDV-T1-E3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 2.45A 6-TSOP
Lifecycle:
New from this manufacturer.
Datasheet:
SI3441BDV-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3441BDV-T1-E3 DatasheetSI3441BDV-T1-E3 Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Tags
SI3441BDV-T1, SI3441BDV-T, SI3441B, SI3441, SI344, SI34, SI3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; P-Ch; VDSS -20V; RDS(ON) 0.07Ohm; ID -2.45A; TSOP-6; PD 0.86W; VGS +/-8V
***th Star Micro
Transistor MOSFET P-CH 20V 2.45A 6-Pin TSOP T/R
***et
Trans MOSFET P-CH 20V 2.45A 6-Pin TSOP T/R
***nell
P CHANNEL MOSFET, -20V, 2.45A, TSOP
***i-Key
MOSFET P-CH 20V 2.45A 6-TSOP
***ser
P-Channel MOSFETs 20V 2.9A 0.09Ohm
***
20V, 130 MOHMS@2.5V
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.45A; On Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:2.45A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-850mV; Power Dissipation Pd:860mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:5.2nC; Current Id Max:-2.45A; Current Temperature:25°C; External Depth:2.85mm; External Length / Height:1.45mm; External Width:3mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance @ Vgs = 2.5V:130mohm; On State Resistance @ Vgs = 4.5V:90mohm; Package / Case:TSOP; Power Dissipation Pd:860mW; Power Dissipation Pd:860mW; Pulse Current Idm:16A; Reverse Recovery Time trr Typ:50ns; SMD Marking:B1xxx; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:-0.45V
Part # Mfg. Description Stock Price
SI3441BDV-T1-E3
DISTI # SI3441BDV-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 20V 2.45A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI3441BDV-T1-E3
    DISTI # SI3441BDV-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 20V 2.45A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI3441BDV-T1-E3
      DISTI # SI3441BDV-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 20V 2.45A 6-TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI3441BDV-T1-E3
        DISTI # 70026099
        Vishay SiliconixMOSFET,Power,P-Ch,VDSS -20V,RDS(ON) 0.07Ohm,ID -2.45A,TSOP-6,PD 0.86W,VGS +/-8V
        RoHS: Compliant
        0
        • 3000:$0.2200
        SI3441BDV-T1-E3
        DISTI # 781-SI3441BDV-T1-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI3433CDV-GE3
        RoHS: Compliant
        0
          SI3441BDV-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.45A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET8996
          • 5927:$0.1125
          • 2223:$0.1350
          • 1:$0.9000
          SI3441BDV-T1-E3Vishay Intertechnologies 2900
            SI3441BDV-T1-E3Vishay Siliconix 11245
            • 8:$0.6750
            • 24:$0.3375
            • 150:$0.2025
            • 742:$0.1350
            • 2594:$0.1013
            • 6171:$0.0911
            SI3441BDVT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant
            2450
              Image Part # Description
              SI3441BDV-T1-GE3

              Mfr.#: SI3441BDV-T1-GE3

              OMO.#: OMO-SI3441BDV-T1-GE3

              MOSFET RECOMMENDED ALT 781-SI3433CDV-GE3
              SI3441BDV-T1-GE3

              Mfr.#: SI3441BDV-T1-GE3

              OMO.#: OMO-SI3441BDV-T1-GE3-VISHAY

              IGBT Transistors MOSFET 20V 2.9A 1.25W 130mohm @ 2.5V
              SI3441BDV

              Mfr.#: SI3441BDV

              OMO.#: OMO-SI3441BDV-1190

              New and Original
              SI3441BDV(B1HAB)

              Mfr.#: SI3441BDV(B1HAB)

              OMO.#: OMO-SI3441BDV-B1HAB--1190

              New and Original
              SI3441BDV-T1

              Mfr.#: SI3441BDV-T1

              OMO.#: OMO-SI3441BDV-T1-1190

              New and Original
              SI3441BDV-T1-E3

              Mfr.#: SI3441BDV-T1-E3

              OMO.#: OMO-SI3441BDV-T1-E3-VISHAY

              MOSFET P-CH 20V 2.45A 6-TSOP
              SI3441BDV-TI-E3

              Mfr.#: SI3441BDV-TI-E3

              OMO.#: OMO-SI3441BDV-TI-E3-1190

              New and Original
              SI3441BDVT1

              Mfr.#: SI3441BDVT1

              OMO.#: OMO-SI3441BDVT1-1190

              New and Original
              Availability
              Stock:
              Available
              On Order:
              3500
              Enter Quantity:
              Current price of SI3441BDV-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
              Reference price (USD)
              Quantity
              Unit Price
              Ext. Price
              1
              $0.00
              $0.00
              10
              $0.00
              $0.00
              100
              $0.00
              $0.00
              500
              $0.00
              $0.00
              1000
              $0.00
              $0.00
              Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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