PartNumber | SI3440DV-T1-GE3 | SI3440DV-T1-E3 | SI3440ADV-T1-GE3 |
Description | MOSFET 150V Vds 20V Vgs TSOP-6 | MOSFET 150V Vds 20V Vgs TSOP-6 | MOSFET 150V Vds 20V Vgs TSOP-6 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
Tradename | TrenchFET | TrenchFET | ThunderFET |
Packaging | Reel | Reel | - |
Height | 1.1 mm | - | - |
Length | 3.05 mm | - | - |
Series | SI3 | SI3 | - |
Width | 1.65 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI3440DV-GE3 | SI3440DV-E3 | - |
Unit Weight | 0.000705 oz | 0.000705 oz | - |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Id Continuous Drain Current | - | 1.5 A | 2.2 A |
Rds On Drain Source Resistance | - | 375 mOhms | 380 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
Vgs Gate Source Voltage | - | 10 V | 20 V |
Qg Gate Charge | - | 5.4 nC | 4 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 2 W | 3.6 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 4.1 S | 2.4 S |
Fall Time | - | 15 ns | 22 ns |
Rise Time | - | 10 ns | 22 ns |
Typical Turn Off Delay Time | - | 20 ns | 9 ns |
Typical Turn On Delay Time | - | 8 ns | 8 ns |
Vds Drain Source Breakdown Voltage | - | - | 150 V |