SI3442BDV-T1-GE3

SI3442BDV-T1-GE3
Mfr. #:
SI3442BDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SI3442BDV-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3442BDV-T1-GE3 DatasheetSI3442BDV-T1-GE3 Datasheet (P4-P6)SI3442BDV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI3442BDV-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSOP-6
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI3
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SI3442BDV-GE3
Unit Weight:
0.000705 oz
Tags
SI3442BDV-T, SI3442B, SI3442, SI344, SI34, SI3
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.057ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH,2.5V,4.2A,DIODE,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.67W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.67W; Voltage Vgs Max:12V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI3442BDV-T1-GE3
DISTI # V36:1790_09216639
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 3A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.2284
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3442BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1919
  • 18000:$0.1969
  • 12000:$0.2029
  • 6000:$0.2109
  • 3000:$0.2179
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R (Alt: SI3442BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1609
  • 18000:€0.1729
  • 12000:€0.1879
  • 6000:€0.2179
  • 3000:€0.3199
SI3442BDV-T1-GE3
DISTI # 781-SI3442BDV-GE3
Vishay IntertechnologiesMOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
RoHS: Compliant
0
  • 1:$0.6100
  • 10:$0.4900
  • 100:$0.3800
  • 500:$0.3100
  • 1000:$0.2500
  • 3000:$0.2300
  • 6000:$0.2100
  • 9000:$0.2000
SI3442BDV-T1-GE3Vishay Intertechnologies 2173
    Image Part # Description
    SI3442BDV-T1-E3

    Mfr.#: SI3442BDV-T1-E3

    OMO.#: OMO-SI3442BDV-T1-E3

    MOSFET 20V 3A
    SI3442BDV-T1-GE3

    Mfr.#: SI3442BDV-T1-GE3

    OMO.#: OMO-SI3442BDV-T1-GE3

    MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
    SI3442BDV

    Mfr.#: SI3442BDV

    OMO.#: OMO-SI3442BDV-1190

    New and Original
    SI3442BDV-T1

    Mfr.#: SI3442BDV-T1

    OMO.#: OMO-SI3442BDV-T1-1190

    New and Original
    SI3442BDV-T1-E3

    Mfr.#: SI3442BDV-T1-E3

    OMO.#: OMO-SI3442BDV-T1-E3-VISHAY

    MOSFET N-CH 20V 3A 6-TSOP
    SI3442BDV-T1-GE3

    Mfr.#: SI3442BDV-T1-GE3

    OMO.#: OMO-SI3442BDV-T1-GE3-VISHAY

    MOSFET N-CH 20V 3A 6-TSOP
    SI3442BDV-T1TE3

    Mfr.#: SI3442BDV-T1TE3

    OMO.#: OMO-SI3442BDV-T1TE3-1190

    New and Original
    SI3442BDVT1E3

    Mfr.#: SI3442BDVT1E3

    OMO.#: OMO-SI3442BDVT1E3-1190

    Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Availability
    Stock:
    Available
    On Order:
    3500
    Enter Quantity:
    Current price of SI3442BDV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.61
    $0.61
    10
    $0.49
    $4.90
    100
    $0.38
    $38.00
    500
    $0.31
    $155.00
    1000
    $0.25
    $250.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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