SI4931DY-T1-GE3

Mfr. #:: SI4931DY-T1-GE3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
Lifecycle:: New from this manufacturer.
Datasheet:: SI4931DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI4931DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: IC Chips

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI4931DY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual

FET-Type: 2 P-Channel (Dual)

Power-Max: 1.1W

Transistor-Type: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 6.7A

Rds-On-Max-Id-Vgs: 18 mOhm @ 8.9A, 4.5V

Vgs-th-Max-Id: 1V @ 350μA

Gate-Charge-Qg-Vgs: 52nC @ 4.5V

Pd-Power-Dissipation: 1.1 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 155 ns

Rise-Time: 46 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuous-Drain-Current: 6.7 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Rds-On-Drain-Source-Resistance: 18 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 230 ns

Typical-Turn-On-Delay-Time: 25 ns

Channel-Mode: Enhancement

Tags: SI4931DY-T, SI4931, SI493, SI49, SI4

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4931DY-T1-GE3 Description

***ure Electronics: DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE

***ical: Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R

***ark: Dual P-Channel 12-V (D-S) Mosfet

SI4931DY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI4931DY-T1-GE3 DISTI # V72:2272_09216664	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant	600	500:$0.6798 250:$0.7742 100:$0.7825 25:$0.9702 10:$0.9815 1:$1.1463
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	26020In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	26020In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	22500In Stock	2500:$0.4500
SI4931DY-T1-GE3 DISTI # 31041114	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant	600	500:$0.6798 250:$0.7742 100:$0.7825 25:$0.9702 13:$0.9815
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$2.5240 5000:$1.9415 7500:$1.5453 12500:$1.3055 25000:$1.2019 62500:$1.1649 125000:$1.1301
SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5999 5000:$0.5819 10000:$0.5579 15000:$0.5429 25000:$0.5279
SI4931DY-T1-GE3 DISTI # 15R5125	Vishay Intertechnologies	DUAL P-CHANNEL 12-V (D-S) MOSFET	0	1:$0.8410 1000:$0.8070 2000:$0.7340 4000:$0.6600 6000:$0.6360 10000:$0.6210
SI4931DY-T1-GE3 DISTI # 781-SI4931DY-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant	7375	1:$1.4500 10:$1.1900 100:$0.9110 500:$0.7840 1000:$0.6190 2500:$0.5780
SI4931DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 560
SI4931DY-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant	Americas -
SI4931DY-T1-GE3 DISTI # C1S803601969446	Vishay Intertechnologies	Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant	600	250:$0.7742 100:$0.7825 25:$0.9702 10:$0.9815

Image	Part #	Description
	Mfr.#: SI4931DY-T1-E3 OMO.#: OMO-SI4931DY-T1-E3	MOSFET -12V Vds 8V Vgs SO-8
	Mfr.#: SI4931DY-T1-GE3 OMO.#: OMO-SI4931DY-T1-GE3	MOSFET -12V Vds 8V Vgs SO-8
	Mfr.#: SI4931DY-T1-GE3 OMO.#: OMO-SI4931DY-T1-GE3-VISHAY	IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
	Mfr.#: SI4931DY-T1-E3-CUT TAPE OMO.#: OMO-SI4931DY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4931DY OMO.#: OMO-SI4931DY-1190	New and Original
	Mfr.#: SI4931DY-E3 OMO.#: OMO-SI4931DY-E3-1190	New and Original
	Mfr.#: SI4931DY-T1-E3 OMO.#: OMO-SI4931DY-T1-E3-VISHAY	MOSFET 2P-CH 12V 6.7A 8-SOIC
	Mfr.#: SI4931DY-T1GE3 OMO.#: OMO-SI4931DY-T1GE3-1190	New and Original

SI4931DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes