 | | | |
| PartNumber | SI4900DY-T1-E3 | SI4904DY-T1-E3 | SI4900DY-T1-GE3 |
| Description | MOSFET 60V 5.3A 3.1W | MOSFET 40V Vds 16V Vgs SO-8 | MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | SI4 | SI4 |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4900DY-E3 | SI4904DY-E3 | SI4900DY-GE3 |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 8 A | - |
| Rds On Drain Source Resistance | - | 16 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 800 mV | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Qg Gate Charge | - | 85 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.25 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 N-Channel | - |
| Forward Transconductance Min | - | 23 S | - |
| Fall Time | - | 19 ns | - |
| Rise Time | - | 117 ns | - |
| Typical Turn Off Delay Time | - | 62 ns | - |
| Typical Turn On Delay Time | - | 88 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4909DY-T1-GE3 | MOSFET -40V Vds 20V Vgs SO-8 | |
| SI4900DY-T1-E3 | MOSFET 60V 5.3A 3.1W | ||
| SI4904DY-T1-GE3 | MOSFET 40V Vds 16V Vgs SO-8 | ||
| SI4904DY-T1-E3 | MOSFET 40V Vds 16V Vgs SO-8 | ||
| SI4900DY-T1-GE3 | MOSFET 60V 5.3A 3.1W 58mohm @ 10V | ||
| SI4908DY-T1-E3 | MOSFET DUAL N-CH 40V(D-S) | ||
| SI4906DY-T1-E3 | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 | ||
| SI4910DY-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 | ||
| SI4908DY-T1-GE3 | MOSFET 40V 5.0A 2.75W 60mohm @ 10V | ||
Vishay |
SI4906DY-T1-E3 | IGBT Transistors MOSFET DUAL N-CH 40V(D-S) | |
| SI4910DY-T1-E3 | IGBT Transistors MOSFET DUAL N-CH 40V(D-S) | ||
| SI4900DY-T1-GE3 | RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V | ||
| SI4904DY-T1-GE3 | MOSFET 2N-CH 40V 8A 8-SOIC | ||
| SI4900DY-T1-E3 | MOSFET 2N-CH 60V 5.3A 8-SOIC | ||
| SI4904DY-T1-E3 | MOSFET 2N-CH 40V 8A 8-SOIC | ||
| SI4906DY-T1-GE3 | MOSFET 2N-CH 40V 6.6A 8-SOIC | ||
| SI4908DY-T1-E3 | MOSFET 2N-CH 40V 5A 8-SOIC | ||
| SI4913DY-T1-E3 | MOSFET 2P-CH 20V 7.1A 8-SOIC | ||
| SI4913DY-T1-GE3 | MOSFET 2P-CH 20V 7.1A 8-SOIC | ||
| SI4910DY-T1-GE3 | MOSFET 2N-CH 40V 7.6A 8-SOIC | ||
| SI4909DY-T1-GE3 | MOSFET 2P-CH 40V 8A 8SO | ||
| SI4908DY-T1-GE3 | MOSFET 2N-CH 40V 5A 8-SOIC | ||
| SI4900DY-T1-E3-CUT TAPE | New and Original | ||
| SI4909DY-T1-GE3-CUT TAPE | New and Original | ||
| SI4900 | New and Original | ||
| SI4900DY | New and Original | ||
| SI4900DY-T1 | New and Original | ||
| SI4900DY-TI-E3 | New and Original | ||
| SI4900DYE3 | Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||
| SI4901 | New and Original | ||
| SI4901-B-GL | New and Original | ||
| SI4901-GL | New and Original | ||
| SI4902DY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| SI4904-GL | New and Original | ||
| SI4904DY | New and Original | ||
| SI4905-GL | New and Original | ||
| SI4906 | New and Original | ||
| SI4906BDY-T1-E3 | New and Original | ||
| SI4906DY | New and Original | ||
| SI4906DY-T1 | New and Original | ||
| SI4906DYT1GE3 | Small Signal Field-Effect Transistor, 5.3A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||
| SI4909 | New and Original | ||
| SI4909DY | New and Original | ||
| SI4909DY-T1-E3 | New and Original | ||
| SI4909DY-T1-GE3CT | New and Original | ||
| SI4910DY | New and Original | ||
| SI4911DY | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.3A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| SI4912 | New and Original | ||
| SI4913A | New and Original | ||
| SI4913DY | New and Original |