SI4900DY-T1-GE3

Mfr. #:: SI4900DY-T1-GE3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SI4900DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI4900DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Tape & Reel (TR)

Part-Aliases: SI4900DY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual

FET-Type: 2 N-Channel (Dual)

Power-Max: 3.1W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

Input-Capacitance-Ciss-Vds: 665pF @ 15V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.3A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 20nC @ 10V

Pd-Power-Dissipation: 2 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 10 ns

Rise-Time: 15 ns 65 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 4.3 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistance: 58 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 20 ns 15 ns

Typical-Turn-On-Delay-Time: 10 ns 15 ns

Channel-Mode: Enhancement

Tags: SI4900DY-T1, SI4900DY-T, SI4900D, SI4900, SI490, SI49, SI4

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4900DY-T1-GE3 Description

***et Japan: Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R

***ure Electronics: MOSFET 60V 5.3A 3.1W 58mohm @ 10V

***nell: DUAL N CHANNEL MOSFET, 60V, 5.3A

***: DUAL N-CHANNEL 60-V (D-S) MOSF

***ark: COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes

SI4900DY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4900DY-T1-GE3 DISTI # V72:2272_09216636	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 10:$0.8556 1:$0.9943
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2907In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2907In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.5544
SI4900DY-T1-GE3 DISTI # 27121565	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 14:$0.8556
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5239 5000:$0.5079 10000:$0.4869 15000:$0.4739 25000:$0.4609
SI4900DY-T1-GE3 DISTI # 23T8519	Vishay Intertechnologies	MOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V RoHS Compliant: Yes	6579	1:$1.4200 10:$1.2000 25:$1.1200 50:$1.0400 100:$0.9590 250:$0.9040 500:$0.8490
SI4900DY-T1-GE3 DISTI # 15R5113	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, 5.3A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$0.6200 1000:$0.5940 2000:$0.5400 4000:$0.4860 6000:$0.4680 10000:$0.4580
SI4900DY-T1-GE3 DISTI # 781-SI4900DY-GE3	Vishay Intertechnologies	MOSFET 60V 5.3A 3.1W 58mohm @ 10V RoHS: Compliant	2489	1:$1.2600 10:$1.0400 100:$0.7960 500:$0.6850 1000:$0.5400 2500:$0.5040
SI4900DY-T1-GE3 DISTI # 7103364	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 4.3A SOIC8, PK	80	10:£0.8360 50:£0.7240 100:£0.5760 250:£0.5360 500:£0.4640
SI4900DY-T1-GE3 DISTI # 7103364P	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 4.3A SOIC8, RL	190	50:£0.7240 100:£0.5760 250:£0.5360 500:£0.4640
SI4900DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4900DY-T1-GE3 DISTI # C1S803601729574	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 10:$0.8556
SI4900DY-T1-GE3 DISTI # 1858965RL	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	0	1:$2.0000 10:$1.6500 100:$1.2600 500:$1.0900 1000:$0.8550 2500:$0.7980
SI4900DY-T1-GE3 DISTI # 1858965	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	6579	1:$2.0000 10:$1.6500 100:$1.2600 500:$1.0900 1000:$0.8550 2500:$0.7980
SI4900DY-T1-GE3 DISTI # 1858965	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	6699	5:£0.9380 25:£0.7710 100:£0.6140 250:£0.5720 500:£0.4950

Image	Part #	Description
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3	MOSFET 60V 5.3A 3.1W
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3	MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-E3-CUT TAPE OMO.#: OMO-SI4900DY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4900DY OMO.#: OMO-SI4900DY-1190	New and Original
	Mfr.#: SI4900DY-T1 OMO.#: OMO-SI4900DY-T1-1190	New and Original
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3-VISHAY	MOSFET 2N-CH 60V 5.3A 8-SOIC
	Mfr.#: SI4900DY-TI-E3 OMO.#: OMO-SI4900DY-TI-E3-1190	New and Original
	Mfr.#: SI4900DYE3 OMO.#: OMO-SI4900DYE3-1190	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

SI4900DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes