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SI4900DY-T1-GE3

SI4900DY-T1-GE3
Mfr. #:
SI4900DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 5.3A 3.1W 58mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SI4900DY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4900DY-T1-GE3 DatasheetSI4900DY-T1-GE3 Datasheet (P4-P6)SI4900DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI4900DY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI4
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
SI4900DY-GE3
Unit Weight:
0.006596 oz
Tags
SI4900DY-T1, SI4900DY-T, SI4900D, SI4900, SI490, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R
***ure Electronics
MOSFET 60V 5.3A 3.1W 58mohm @ 10V
***nell
DUAL N CHANNEL MOSFET, 60V, 5.3A
***
DUAL N-CHANNEL 60-V (D-S) MOSF
***ark
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4900DY-T1-GE3
DISTI # V72:2272_09216636		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		304
  • 250:$0.6143
  • 100:$0.6827
  • 25:$0.8453
  • 10:$0.8556
  • 1:$0.9943
SI4900DY-T1-GE3
DISTI # SI4900DY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2907In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SI4900DY-T1-GE3
DISTI # SI4900DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2907In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SI4900DY-T1-GE3
DISTI # SI4900DY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.5544
SI4900DY-T1-GE3
DISTI # 27121565		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		304
  • 250:$0.6143
  • 100:$0.6827
  • 25:$0.8453
  • 14:$0.8556
SI4900DY-T1-GE3
DISTI # SI4900DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5239
  • 5000:$0.5079
  • 10000:$0.4869
  • 15000:$0.4739
  • 25000:$0.4609
SI4900DY-T1-GE3
DISTI # 23T8519		Vishay IntertechnologiesMOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V RoHS Compliant: Yes6579
  • 1:$1.4200
  • 10:$1.2000
  • 25:$1.1200
  • 50:$1.0400
  • 100:$0.9590
  • 250:$0.9040
  • 500:$0.8490
SI4900DY-T1-GE3
DISTI # 15R5113		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 60V, 5.3A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$0.6200
  • 1000:$0.5940
  • 2000:$0.5400
  • 4000:$0.4860
  • 6000:$0.4680
  • 10000:$0.4580
SI4900DY-T1-GE3
DISTI # 781-SI4900DY-GE3		Vishay IntertechnologiesMOSFET 60V 5.3A 3.1W 58mohm @ 10V
RoHS: Compliant		2489
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.6850
  • 1000:$0.5400
  • 2500:$0.5040
SI4900DY-T1-GE3
DISTI # 7103364		Vishay IntertechnologiesMOSFET N-CHANNEL 60V 4.3A SOIC8, PK80
  • 10:£0.8360
  • 50:£0.7240
  • 100:£0.5760
  • 250:£0.5360
  • 500:£0.4640
SI4900DY-T1-GE3
DISTI # 7103364P		Vishay IntertechnologiesMOSFET N-CHANNEL 60V 4.3A SOIC8, RL190
  • 50:£0.7240
  • 100:£0.5760
  • 250:£0.5360
  • 500:£0.4640
SI4900DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
RoHS: Compliant		Europe - 2500
    SI4900DY-T1-GE3
    DISTI # C1S803601729574    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
    RoHS: Compliant    		304
    • 250:$0.6143
    • 100:$0.6827
    • 25:$0.8453
    • 10:$0.8556
    SI4900DY-T1-GE3
    DISTI # 1858965RL    		Vishay IntertechnologiesMOSFET,NN CH,DIODE,60V,5.3A,8-SOIC
    RoHS: Compliant    		0
    • 1:$2.0000
    • 10:$1.6500
    • 100:$1.2600
    • 500:$1.0900
    • 1000:$0.8550
    • 2500:$0.7980
    SI4900DY-T1-GE3
    DISTI # 1858965    		Vishay IntertechnologiesMOSFET,NN CH,DIODE,60V,5.3A,8-SOIC
    RoHS: Compliant    		6579
    • 1:$2.0000
    • 10:$1.6500
    • 100:$1.2600
    • 500:$1.0900
    • 1000:$0.8550
    • 2500:$0.7980
    SI4900DY-T1-GE3
    DISTI # 1858965    		Vishay IntertechnologiesMOSFET,NN CH,DIODE,60V,5.3A,8-SOIC
    RoHS: Compliant    		6699
    • 5:£0.9380
    • 25:£0.7710
    • 100:£0.6140
    • 250:£0.5720
    • 500:£0.4950
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    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of SI4900DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.25
    $1.25
    10
    $1.03
    $10.30
    100
    $0.80
    $79.50
    500
    $0.68
    $342.00
    1000
    $0.54
    $539.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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