IXFH6N100F

IXFH6N100F
Mfr. #:
IXFH6N100F
Manufacturer:
Littelfuse
Description:
MOSFET HiPerRF Power Mosfet 1000V 6A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFH6N100F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH6N100F Datasheet
ECAD Model:
More Information:
IXFH6N100F more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
1.9 Ohms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
180 W
Configuration:
Single
Channel Mode:
Enhancement
Height:
21.46 mm
Length:
16.26 mm
Series:
IXFH6N100
Transistor Type:
1 N-Channel
Width:
5.3 mm
Brand:
IXYS
Fall Time:
8.3 ns
Product Type:
MOSFET
Rise Time:
8.6 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.229281 oz
Tags
IXFH6N10, IXFH6N1, IXFH6N, IXFH6, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 1KV 6A 3-Pin(3+Tab) TO-247AD
***i-Key
MOSFET N-CH 1000V 6A TO247
***ment14 APAC
MOSFET, N, RF, TO-247AD
***ark
MOSFET, N, RF, TO-247AD; Transistor Type:MOSFET; Drain Source Voltage Vds:1000V; Continuous Drain Current Id:6A; Power Dissipation Max:180W; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Package / Case:TO-247AD; ;RoHS Compliant: Yes
Power MOSFETs
IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Part # Mfg. Description Stock Price
IXFH6N100F
DISTI # V36:1790_14391214
IXYS CorporationTrans MOSFET N-CH Si 1KV 6A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
0
  • 300000:$3.7940
  • 150000:$3.8010
  • 30000:$5.1650
  • 3000:$8.2680
  • 300:$8.8300
IXFH6N100F
DISTI # IXFH6N100F-ND
IXYS CorporationMOSFET N-CH 1000V 6A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 510:$5.4715
  • 120:$6.5305
  • 30:$7.2367
  • 10:$7.9430
  • 1:$8.8300
IXFH6N100F
DISTI # 747-IXFH6N100F
IXYS CorporationMOSFET HiPerRF Power Mosfet 1000V 6A
RoHS: Compliant
933
  • 1:$8.8300
  • 10:$8.0300
  • 25:$7.2300
  • 100:$6.5300
  • 250:$6.5200
  • 500:$5.4700
  • 1000:$5.3300
IXFH6N100F
DISTI # 1347754
IXYS CorporationMOSFET, N, RF, TO-247AD
RoHS: Compliant
0
  • 120:$9.8500
  • 30:$10.9100
  • 10:$11.9700
  • 1:$13.3100
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Availability
Stock:
933
On Order:
2916
Enter Quantity:
Current price of IXFH6N100F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.83
$8.83
10
$8.03
$80.30
25
$7.23
$180.75
100
$6.53
$653.00
250
$6.52
$1 630.00
500
$5.47
$2 735.00
1000
$5.33
$5 330.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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