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IXFH6N100F

P1-P2
© 2001 IXYS CORPORATION, All Rights Reserved
DS98732A(08/01)
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
Features
z
RF capable MOSFETs
z
Double metal process for low gate
resistance
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
13.5 MHz industrial applications
z
Pulse generation
z
Laser drivers
z
RF amplifiers
Advantages
z
Space savings
z
High power density
V
DSS
= 1000V
I
D25
= 6A
R
DS(on)
≤≤
≤≤
≤ 1.9
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low
Intrinsic R
g
, High dV/dt, Low t
rr
IXFH6N100F
IXFT6N100F
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ± 20 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C6A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
24 A
I
AR
T
C
= 25°C6A
E
AS
T
C
= 25°C 700 mJ
dV/dt I
S
≤ I
DM
, di/dt < 100A/μs, V
DD
≤ V
DSS
5 V/ns
T
J
≤ 150°C, R
G
= 2Ω
P
D
T
C
= 25°C 180 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 500μA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5mA 3.0 5.5 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
50 μA
V
GS
= 0V T
J
= 125°C 1 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 1.9 Ω
G = Gate D = Drain
S = Source TAB = Drain
TO-268 (IXFT)
G
S
TO-247 (IXFH)
TAB
TAB
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH6N100F
IXFT6N100F
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 3.0 5.5 S
C
iss
1770 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 186 pF
C
rss
53 pF
t
d(on)
11.0 ns
t
r
8.6 ns
t
d(off)
21.0 ns
t
f
8.3 ns
Q
g(on)
54 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
14 nC
Q
gd
27 nC
R
thJC
0.65 °C/W
R
thCS
(TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 6 A
I
SM
Repetitive, pulse width limited by T
JM
24 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
250 ns
Q
RM
0.6 μC
I
RM
4.0 A
I
F
= 6A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXFH) Outline
TO-268 Outline
Min Recommended Footprint
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2Ω (External)
P1-P2

IXFH6N100F

Mfr. #:
Buy IXFH6N100F
Manufacturer:
Littelfuse
Description:
MOSFET HiPerRF Power Mosfet 1000V 6A
Lifecycle:
New from this manufacturer.
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