IXFT6N100F

IXFT6N100F
Mfr. #:
IXFT6N100F
Manufacturer:
Littelfuse
Description:
MOSFET IXFT6N100F 1000V 6A HIPERFET F-Class HiPerRF Capable MOSFETs
Lifecycle:
New from this manufacturer.
Datasheet:
IXFT6N100F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFT6N100F Datasheet
ECAD Model:
More Information:
IXFT6N100F more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-268-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
1.9 Ohms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
180 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
5.1 mm
Length:
16.05 mm
Series:
HiPerRF
Transistor Type:
1 N-Channel
Width:
14 mm
Brand:
IXYS
Fall Time:
8.3 ns
Product Type:
MOSFET
Rise Time:
8.6 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.229281 oz
Tags
IXFT6, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
F -Class HiPerRF Capable MOSFE
***i-Key
MOSFET N-CH 1000V 6A TO268
Power MOSFETs
IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Part # Mfg. Description Stock Price
IXFT6N100F
DISTI # V36:1790_14391223
IXYS CorporationTrans MOSFET N-CH Si 1KV 6A 3-Pin(2+Tab) TO-268
RoHS: Compliant
0
  • 1020:$3.1030
  • 510:$3.5880
  • 120:$5.4090
  • 30:$11.0300
IXFT6N100F
DISTI # IXFT6N100F-ND
IXYS CorporationMOSFET N-CH 1000V 6A TO268
RoHS: Compliant
Min Qty: 1
Container: Tube
188In Stock
  • 510:$6.2155
  • 120:$7.4185
  • 30:$8.2207
  • 10:$9.0230
  • 1:$10.0300
IXFT6N100F
DISTI # 747-IXFT6N100F
IXYS CorporationMOSFET IXFT6N100F 1000V 6A HIPERFET F-Class HiPerRF Capable MOSFETs
RoHS: Compliant
91
  • 1:$11.0300
  • 10:$10.3800
  • 25:$9.0400
  • 100:$8.1600
  • 250:$7.4000
  • 500:$6.5900
  • 1000:$6.0600
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Mfr.#: 08-50-0114

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Headers & Wire Housings CRIMP TERM 22-30 TIN
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Mfr.#: ERJ-3GEY0R00V

OMO.#: OMO-ERJ-3GEY0R00V

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Mfr.#: STM32F769NIH6

OMO.#: OMO-STM32F769NIH6-STMICROELECTRONICS

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C2M1000170J

Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J-WOLFSPEED

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SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120-STMICROELECTRONICS

MOSFET N-CH 1.2KV TO247-3
Availability
Stock:
89
On Order:
2072
Enter Quantity:
Current price of IXFT6N100F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.03
$11.03
10
$10.38
$103.80
25
$9.04
$226.00
100
$8.16
$816.00
250
$7.40
$1 850.00
500
$6.59
$3 295.00
1000
$6.06
$6 060.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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