PartNumber | IXFH6N100F | IXFH6N100Q | IXFH6N100 |
Description | MOSFET HiPerRF Power Mosfet 1000V 6A | MOSFET 6 Amps 1000V 2 Rds | MOSFET 1KV 6A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | 1 kV |
Id Continuous Drain Current | 6 A | 6 A | 6 A |
Rds On Drain Source Resistance | 1.9 Ohms | 1.9 Ohms | 2 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 180 W | 180 W | 180 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Height | 21.46 mm | 21.46 mm | 21.46 mm |
Length | 16.26 mm | 16.26 mm | 16.26 mm |
Series | IXFH6N100 | IXFH6N100 | IXFH6N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.3 mm | 5.3 mm | 5.3 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 8.3 ns | 12 ns | 60 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8.6 ns | 15 ns | 40 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | 22 ns | 100 ns |
Typical Turn On Delay Time | 11 ns | 10 ns | 35 ns |
Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
Tradename | - | HyperFET | HyperFET |
Packaging | - | Tube | Tube |
Forward Transconductance Min | - | - | 6 S |