SI4900DY-T1-E3

Mfr. #:: SI4900DY-T1-E3
Manufacturer:: Vishay
Description:: MOSFET 2N-CH 60V 5.3A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4900DY-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI4900DY-T1-E3 more Information

Product Attribute
Attribute Value

Tags: SI4900DY-T1, SI4900DY-T, SI4900D, SI4900, SI490, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4900DY-T1-E3 Description

***ure Electronics: Dual N-Channel 60 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R

***i-Key: MOSFET 2N-CH 60V 5.3A 8-SOIC

***Components: Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V

***eco: DUAL N-CH MOSFET SO-8 60V 58MOHM @ 10V<AZ

***ronik: DUAL 60V 5A 58mOhm SO-8 RoHSconf

***: DUAL N-CHANNEL 60-V (D-S)

***ied Electronics & Automation: TRANSITOR; SI9933BDY

***ark: Transistor; Continuous Drain Current, Id:5300mA; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes

SI4900DY-T1-E3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4900DY-T1-E3 DISTI # V72:2272_07432390	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	43	25:$0.9195 10:$1.0217 1:$1.3601
SI4900DY-T1-E3 DISTI # V36:1790_07432390	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.4909 1250000:$0.4911 250000:$0.5043 25000:$0.5257 2500:$0.5292
SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13982In Stock	1000:$0.5840 500:$0.7397 100:$0.8955 10:$1.1490 1:$1.2800
SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13982In Stock	1000:$0.5840 500:$0.7397 100:$0.8955 10:$1.1490 1:$1.2800
SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	12500:$0.4838 5000:$0.5027 2500:$0.5292
SI4900DY-T1-E3 DISTI # 32675049	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	43	14:$1.3601
SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4609 15000:$0.4739 10000:$0.4869 5000:$0.5079 2500:$0.5239
SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2599 15000:€0.2789 10000:€0.3019 5000:€0.3509 2500:€0.5149
SI4900DY-T1-E3 DISTI # 09X6438	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	0	500:$0.7060 250:$0.7960 100:$0.9510 50:$1.0500 25:$1.1700 10:$1.2900 1:$1.3600
SI4900DY-T1-E3 DISTI # 51K6968	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	10000:$0.4580 6000:$0.4680 4000:$0.4860 2000:$0.5400 1000:$0.5940 1:$0.6200
SI4900DY-T1-E3 DISTI # R1082540	Vishay Dale	TRANSITOR,SI9933BDY RoHS: Compliant	0	10:$1.6200 50:$1.3400 100:$1.2200 250:$1.1200 500:$1.0500
SI4900DY-T1-E3 DISTI # 781-SI4900DY-E3	Vishay Intertechnologies	MOSFET 60V 5.3A 3.1W RoHS: Compliant	4962	1:$1.2500 10:$1.0300 100:$0.7950 500:$0.6840 1000:$0.5390 2500:$0.5030 5000:$0.4780
SI4900DY-T1-E3 DISTI # 1807298	Vishay Intertechnologies	DUAL N-CH MOSFET SO-8 60V 58MOHM @ 10V, RL	2350	5000:£0.3750 2500:£0.3810
SI4900DY-T1-E3	Vishay Intertechnologies	MOSFET 60V 5.3A 3.1W	Americas -

Related products

Image	Part #	Description
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3	MOSFET 60V 5.3A 3.1W
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3	MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-E3-CUT TAPE OMO.#: OMO-SI4900DY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4900DY OMO.#: OMO-SI4900DY-1190	New and Original
	Mfr.#: SI4900DY-T1 OMO.#: OMO-SI4900DY-T1-1190	New and Original
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3-VISHAY	MOSFET 2N-CH 60V 5.3A 8-SOIC
	Mfr.#: SI4900DY-TI-E3 OMO.#: OMO-SI4900DY-TI-E3-1190	New and Original
	Mfr.#: SI4900DYE3 OMO.#: OMO-SI4900DYE3-1190	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of SI4900DY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.44~~; ~~$0.44~~

10: ~~$0.42~~; ~~$4.21~~

100: ~~$0.40~~; ~~$39.87~~

500: ~~$0.38~~; ~~$188.30~~

1000: ~~$0.35~~; ~~$354.40~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI4900DY-T1 4
SI4900DY-T 5
SI4900D 7
SI4900 8
SI490 32
SI49 329
SI4 2994

SI4900DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes