TSM2311CX RFG

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

45 mOhms

Vgs th - Gate-Source Threshold Voltage:

450 mV

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

900 mW

Configuration:

Single

Channel Mode:

Enhancement

Product:

Rectifiers

Transistor Type:

1 P-Channel

Brand:

Taiwan Semiconductor

Forward Transconductance - Min:

9 S

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

35 ns

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

45 ns

Typical Turn-On Delay Time:

22 ns

Tags

TSM2311CXR, TSM2311C, TSM2311, TSM231, TSM23, TSM2, TSM