PartNumber | TSM2311CX | TSM2311 | TSM2311CX RF |
Description | MOSFET 20V P channel MOSFET | ||
Manufacturer | TSC | TSC | - |
Product Category | IC Chips | IC Chips | - |
Packaging | Reel | Reel | - |
Part Aliases | RFG | RFG | - |
Unit Weight | 0.050717 oz | 0.050717 oz | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package Case | SOT-23-3 | SOT-23-3 | - |
Technology | Si | Si | - |
Number of Channels | 1 Channel | 1 Channel | - |
Configuration | Single | Single | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Pd Power Dissipation | 900 mW | 900 mW | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Fall Time | 35 ns | 35 ns | - |
Rise Time | 35 ns | 35 ns | - |
Vgs Gate Source Voltage | 8 V | 8 V | - |
Id Continuous Drain Current | - 4 A | - 4 A | - |
Vds Drain Source Breakdown Voltage | - 20 V | - 20 V | - |
Vgs th Gate Source Threshold Voltage | - 1.4 V | - 1.4 V | - |
Rds On Drain Source Resistance | 55 mOhms | 55 mOhms | - |
Transistor Polarity | P-Channel | P-Channel | - |
Typical Turn Off Delay Time | 45 ns | 45 ns | - |
Typical Turn On Delay Time | 22 ns | 22 ns | - |
Channel Mode | Enhancement | Enhancement | - |