OMO ElectronicOMO Electronic
Expand menu
0 Cart

TSM2311CX RFG

P1-P3P4-P6
TSM2311
20V P-Channel MOSFET
Document Number: DS_P0000053 1 Version: C15
SOT
-
23
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM2311CX RFG SOT-23 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±8 V
Continuous Drain Current, V
GS
@ 4.5V. I
D
-4 A
Pulsed Drain Current, V
GS
@ 4.5V I
DM
-20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-0.72 A
Maximum Power Dissipation
Ta = 25°C
P
D
0.9
W
Ta = 75°C 0.57
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) T
L
5 S
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
250 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
c. Surface Mounted on FR4 Board,
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
(A)
-20
55 @ V
GS
= -4.5V -4.0
85 @ V
GS
= -2.5V -2.5
Pin
Definition
:
1. Gate
2. Source
3. Drain
Block Diagram
P-Channel MOSFET
Not Recommended
TSM2311
20V P-Channel MOSFET
Document Number: DS_P0000053 2 Version: C15
Electrical Specifications (Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250uA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-0.6 -- -1.4 V
Gate Body Leakage V
GS
= ±8V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= -16V, V
GS
= 0V I
DSS
-- -- -1.0 µA
On-State Drain Current
a
V
DS
≥
-10V, V
GS
= -5V I
D(ON)
-6 -- -- A
Drain-Source On-State
Resistance
a
V
GS
= -4.5V, I
D
= -4A
R
DS(ON)
-- 45 55
mΩ
V
GS
= -2.5V, I
D
= -2.5A -- 75 85
Forward Transconductance
a
V
DS
= -5V, I
D
= -4A g
fs
-- 9 -- S
Diode Forward Voltage I
S
= -0.75A, V
GS
= 0V V
SD
-- - 0.8 -1.2 V
Dynamic
b
Total Gate Charge
V
DS
= -6V, I
D
= -4A,
V
GS
= -4.5V
Q
g
-- 6 9
nC
Gate-Source Charge Q
gs
-- 1.4 --
Gate-Drain Charge Q
gd
-- 1.9 --
Input Capacitance
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 640 --
pF
Output Capacitance C
oss
-- 180 --
Reverse Transfer Capacitance C
rss
-- 90 --
Switching
c
Turn-On Delay Time
V
DD
= -6V, R
L
= 6Ω,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6Ω
t
d(on)
-- 22 35
nS
Turn-On Rise Time t
r
-- 35 55
Turn-Off Delay Time t
d(off)
-- 45 70
Turn-Off Fall Time t
f
-- 25 50
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Not Recommended
TSM2311
20V P-Channel MOSFET
Document Number: DS_P0000053 3 Version: C15
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Not Recommended
P1-P3P4-P6

TSM2311CX RFG

Mfr. #:
Buy TSM2311CX RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 20V P channel Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet