FCP13N60N

FCP13N60N
Mfr. #:
FCP13N60N
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 600V, 13A, N-Chan
Lifecycle:
New from this manufacturer.
Datasheet:
FCP13N60N Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
244 mOhms
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
116 W
Configuration:
Single
Tradename:
SupreMOS
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FCP13N60N
Transistor Type:
1 N-Channel
Type:
N-Channel MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
16.3 S
Fall Time:
9.8 ns
Product Type:
MOSFET
Rise Time:
10.6 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
454 ns
Typical Turn-On Delay Time:
14.5 ns
Unit Weight:
0.063493 oz
Tags
FCP13N, FCP13, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***ure Electronics
Single N-Channel 600 V 0.258 Ohm 39.5 nC 33.8 W Silicon Mosfet - TO-220-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,13A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.244ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:116W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Part # Mfg. Description Stock Price
FCP13N60N
DISTI # V36:1790_06359904
ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS400
  • 500:$1.6070
  • 250:$1.7440
  • 100:$2.3180
  • 25:$2.4779
  • 10:$2.7530
  • 1:$3.5574
FCP13N60N
DISTI # FCP13N60NFS-ND
ON SemiconductorMOSFET N-CH 600V 13A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
370In Stock
  • 5600:$1.6584
  • 3200:$1.7231
  • 800:$2.1507
  • 100:$2.5264
  • 25:$2.9152
  • 10:$3.0840
  • 1:$3.4300
FCP13N60N
DISTI # 32673048
ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS1600
  • 800:$3.5574
FCP13N60N
DISTI # 32438410
ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS1600
  • 800:$1.6462
FCP13N60N
DISTI # 32624600
ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS400
  • 4:$3.5574
FCP13N60N
DISTI # FCP13N60N
ON SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail (Alt: FCP13N60N)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.3900
  • 100:€1.4900
  • 500:€1.4900
  • 50:€1.5900
  • 10:€1.6900
  • 25:€1.6900
  • 1:€1.8900
FCP13N60N
DISTI # FCP13N60N
ON SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: FCP13N60N)
RoHS: Not Compliant
Min Qty: 172
Container: Bulk
Americas - 0
  • 344:$1.7900
  • 516:$1.7900
  • 860:$1.7900
  • 1720:$1.7900
  • 172:$1.8900
FCP13N60N
DISTI # FCP13N60N
ON SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FCP13N60N)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 3200:$1.4900
  • 4800:$1.4900
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
FCP13N60N
DISTI # 64R2986
ON SemiconductorSM 600V 258MOHM F TO220 / TUBE0
  • 10000:$1.7200
  • 2500:$1.8300
  • 1000:$1.9200
  • 500:$2.2700
  • 100:$2.5100
  • 10:$3.0400
  • 1:$3.7600
FCP13N60N
DISTI # 512-FCP13N60N
ON SemiconductorMOSFET 600V, 13A, N-Chan
RoHS: Compliant
591
  • 1:$3.2600
  • 10:$2.7700
  • 100:$2.4000
  • 250:$2.2800
  • 500:$2.0400
  • 1000:$1.7700
FCP13N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
6133
  • 1000:$1.8000
  • 500:$1.9000
  • 100:$1.9800
  • 25:$2.0600
  • 1:$2.2200
FCP13N60N
DISTI # 7396143P
ON SemiconductorMOSFET N-CHANNEL 600V 13A TO220, TU271
  • 200:£2.9300
  • 100:£3.1600
  • 50:£3.3900
  • 10:£3.7000
FCP13N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant
200
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    Availability
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    On Order:
    2574
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    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.26
    $3.26
    10
    $2.77
    $27.70
    100
    $2.40
    $240.00
    250
    $2.28
    $570.00
    500
    $2.04
    $1 020.00
    1000
    $1.77
    $1 770.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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