OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXyH100N65C3

IXyH100N65C3
Mfr. #:
IXyH100N65C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/200A XPT C3-Class TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
IXyH100N65C3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXyH100N65C3 DatasheetIXyH100N65C3 Datasheet (P4-P6)
ECAD Model:
More Information:
IXyH100N65C3 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.85 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
200 A
Pd - Power Dissipation:
830 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
IXYH100N65
Packaging:
Tube
Continuous Collector Current Ic Max:
200 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
1.340411 oz
Tags
IXYH10, IXYH1, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Part # Mfg. Description Stock Price
IXYH100N65C3
DISTI # V36:1790_07768386		Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND		IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube		316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3		IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3    		IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant    		28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
    Image Part # Description
    IX2127NTR

    Mfr.#: IX2127NTR

    OMO.#: OMO-IX2127NTR

    		 Gate Drivers High-Voltage MOSFET 600V, 250/500mA
    IX3120G

    Mfr.#: IX3120G

    OMO.#: OMO-IX3120G

    		 Gate Drivers 2.5A Output Current Gate Driver
    IX21844G

    Mfr.#: IX21844G

    OMO.#: OMO-IX21844G

    		 Gate Drivers 600V Half-Bridge Gate Driver
    IX2113B

    Mfr.#: IX2113B

    OMO.#: OMO-IX2113B

    		 Gate Drivers 16 Pin SOIC gatedrvr 600v
    IX21844N

    Mfr.#: IX21844N

    OMO.#: OMO-IX21844N

    		 Gate Drivers 600V Half-Bridge Gate Driver
    SDINBDG4-32G-XI1

    Mfr.#: SDINBDG4-32G-XI1

    OMO.#: OMO-SDINBDG4-32G-XI1

    		 eMMC 32GB iNAND 7250 Ind. eMMC 5.1 -40C to 85C
    IX3120GS

    Mfr.#: IX3120GS

    OMO.#: OMO-IX3120GS

    		 Gate Drivers 2.5A Output Gate Drv 60747-5-5 option
    SMBJP6KE22CA-TP

    Mfr.#: SMBJP6KE22CA-TP

    OMO.#: OMO-SMBJP6KE22CA-TP

    		 TVS Diodes / ESD Suppressors 30.6V 600W 19.9A
    SMBJP6KE30CA-TP

    Mfr.#: SMBJP6KE30CA-TP

    OMO.#: OMO-SMBJP6KE30CA-TP

    		 TVS Diodes / ESD Suppressors 41.4V 600W 14.7A
    FGY120T65SPD-F085

    Mfr.#: FGY120T65SPD-F085

    OMO.#: OMO-FGY120T65SPD-F085

    		 IGBT Transistors 650V FS Trench IGBT Gen3
    Availability
    Stock:
    66
    On Order:
    2049
    Enter Quantity:
    Current price of IXyH100N65C3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $8.87
    $8.87
    10
    $7.98
    $79.80
    25
    $7.27
    $181.75
    50
    $6.65
    $332.50
    100
    $6.56
    $656.00
    250
    $5.98
    $1 495.00
    500
    $5.50
    $2 750.00
    1000
    $4.79
    $4 790.00
    2500
    $4.73
    $11 825.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Newest Products
    More Newest Products
    Top