PartNumber | IXYH10N170C | IXYH100N65A3 | IXyH100N65C3 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD | IGBT Transistors 650V/200A XPT C3-Class TO-247 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | IGBT Transistors |
RoHS | Y | Y | Y |
Product | Power Semiconductor Modules | Power Semiconductor Modules | - |
Type | High Voltage | GenX3 | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | - |
Fall Time | 70 ns | 86 ns | - |
Id Continuous Drain Current | 36 A | 240 A | - |
Pd Power Dissipation | 280 W | 470 W | 830 W |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | IGBT Transistors |
Rise Time | 17 ns | 64 ns | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | IGBTs |
Tradename | XPT | XPT | XPT |
Typical Turn Off Delay Time | 130 ns | 174 ns | - |
Typical Turn On Delay Time | 14 ns | 24 ns | - |
Vds Drain Source Breakdown Voltage | 1700 V | 650 V | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3.5 V | - |
Technology | - | - | Si |
Collector Emitter Voltage VCEO Max | - | - | 650 V |
Collector Emitter Saturation Voltage | - | - | 1.85 V |
Maximum Gate Emitter Voltage | - | - | 30 V |
Continuous Collector Current at 25 C | - | - | 200 A |
Series | - | - | IXYH100N65 |
Continuous Collector Current Ic Max | - | - | 200 A |
Gate Emitter Leakage Current | - | - | 100 nA |
Unit Weight | - | - | 1.340411 oz |