IXYH100N65C3

IXYH100N65C3
Mfr. #:
IXYH100N65C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/200A XPT C3-Class TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
IXYH100N65C3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IXYH100N65C3 more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
IGBTs - Single
Series
GenX3, XPT
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Tradename
XPT
Package-Case
TO-247-3
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
TO-247 (IXYH)
Configuration
Single
Power-Max
830W
Reverse-Recovery-Time-trr
-
Current-Collector-Ic-Max
200A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT-Type
PT
Current-Collector-Pulsed-Icm
420A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 70A
Switching-Energy
2.15mJ (on), 840μJ (off)
Gate-Charge
164nC
Td-on-off-25°C
28ns/106ns
Test-Condition
400V, 50A, 3 Ohm, 15V
Pd-Power-Dissipation
830 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Collector-Emitter-Voltage-VCEO-Max
650 V
Collector-Emitter-Saturation-Voltage
1.85 V
Continuous-Collector-Current-at-25-C
200 A
Gate-Emitter-Leakage-Current
100 nA
Maximum-Gate-Emitter-Voltage
30 V
Continuous-Collector-Current-Ic-Max
200 A
Tags
IXYH10, IXYH1, IXYH, IXY
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Part # Mfg. Description Stock Price
IXYH100N65C3
DISTI # V36:1790_07768386
Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND
IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube
316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3
IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant
66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant
Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3
    IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant
    28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
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    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3-IXYS-CORPORATION

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    Mfr.#: IXYH10N170CV1

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    IXYH100N65C3

    Mfr.#: IXYH100N65C3

    OMO.#: OMO-IXYH100N65C3-IXYS-CORPORATION

    IGBT Transistors 650V/200A XPT C3-Class TO-247
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of IXYH100N65C3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $7.18
    $7.18
    10
    $6.83
    $68.26
    100
    $6.47
    $646.65
    500
    $6.11
    $3 053.65
    1000
    $5.75
    $5 748.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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