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IRF6618TR1

IRF6618TR1
Mfr. #:
IRF6618TR1
Manufacturer:
Infineon / IR
Description:
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6618TR1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
N
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MT
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
29 A
Rds On - Drain-Source Resistance:
2.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
43 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.8 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
5.05 mm
Brand:
Infineon / IR
Fall Time:
8.1 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
71 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
27 ns
Typical Turn-On Delay Time:
21 ns
Tags
IRF6618TR1, IRF6618T, IRF6618, IRF661, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT packag
***ark
MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:170A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:170A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Current, Idm Pulse:240A; External Depth:6.35mm; External Length / Height:0.7mm; IC Package (Case style):MT; No. of Pins:7; Power Dissipation:2.8W; Power, Pd:2.8W; Resistance, Rds on Max:2.2mohm; SMD Marking:6618; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:43ns; Transistors, No. of:1; Typ Capacitance Ciss:5640pF; Typ Charge Qrr @ Tj = 25°C:46nC; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:20V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V; Width, External:5.05mm
Part # Mfg. Description Stock Price
IRF6618TR1
DISTI # IRF6618TR1-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6618TR1PBF
    DISTI # IRF6618TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6618TR1PBF
      DISTI # IRF6618TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6618TR1PBF
        DISTI # IRF6618TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6618TR1PBF
          DISTI # 70018828          		Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MT
          RoHS: Compliant          		0
          • 1000:$2.5000
          • 2000:$2.3000
          IRF6618TR1
          DISTI # 942-IRF6618TR1          		Infineon Technologies AGMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
          RoHS: Not compliant          		0
            IRF6618TR1PBF
            DISTI # 942-IRF6618TR1PBF            		Infineon Technologies AGMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
            RoHS: Compliant            		0
              IRF6618TR1International Rectifier30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET66
              • 10:$2.1750
              • 3:$2.9000
              • 1:$4.3500
              IRF6618TR1
              DISTI # 9266585              		Infineon Technologies AG 
              RoHS: Compliant              		0
              • 1:$4.8000
              • 10:$4.5000
              • 100:$4.0700
              • 250:$3.9200
              • 500:$3.7200
              • 1000:$3.7200
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              Mfr.#: IRF6643TRPBF-CUT TAPE

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              Availability
              Stock:
              Available
              On Order:
              4500
              Enter Quantity:
              Current price of IRF6618TR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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