 |  | |
| PartNumber | IRF6618TR1 | IRF6618TR1PBF |
| Description | MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC | MOSFET N-CH 30V 30A DIRECTFET |
| Manufacturer | Infineon | IR |
| Product Category | MOSFET | FETs - Single |
| RoHS | N | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | DirectFET-MT | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 29 A | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 43 nC | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.8 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 0.7 mm | - |
| Length | 6.35 mm | - |
| Transistor Type | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | - |
| Width | 5.05 mm | - |
| Brand | Infineon / IR | - |
| Fall Time | 8.1 ns | - |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | - |
| Rise Time | 71 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | - |
| Typical Turn On Delay Time | 21 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6618TR1 | MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC | |
Infineon Technologies |
IRF6618TR1 | MOSFET N-CH 30V 30A DIRECTFET | |
| IRF6618TR1PBF | MOSFET N-CH 30V 30A DIRECTFET |