IRF6618T

IRF6618TRPBF vs IRF6618TR1 vs IRF6618TR1PBF

 
PartNumberIRF6618TRPBFIRF6618TR1IRF6618TR1PBF
DescriptionMOSFET 30V N-CH 2.2mOhm HEXFET 43 nCMOSFET 30V N-CH 2.2mOhm HEXFET 43 nCMOSFET N-CH 30V 30A DIRECTFET
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MTDirectFET-MT-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current170 A29 A-
Rds On Drain Source Resistance3.4 mOhms2.2 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge46 nC43 nC-
Pd Power Dissipation89 W2.8 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity48001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001529242--
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Fall Time-8.1 ns-
Moisture Sensitive-Yes-
Rise Time-71 ns-
Typical Turn Off Delay Time-27 ns-
Typical Turn On Delay Time-21 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF6618TRPBF MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
IRF6618TR1 MOSFET N-CH 30V 30A DIRECTFET
IRF6618TR1PBF MOSFET N-CH 30V 30A DIRECTFET
IRF6618TRPBF MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
Infineon / IR
Infineon / IR
IRF6618TR1 MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
IRF6618TRPBF. New and Original
IRF6618TRPBFIRF6618TR1PB New and Original
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