SPP20N60C3XKSA1

Mfr. #:: SPP20N60C3XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 650V 20.7A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: SPP20N60C3XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 20.7 A

Rds On - Drain-Source Resistance:: 190 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.1 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 87 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 208 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: CoolMOS C3

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 4.5 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 67 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: SP000681058 SPP20N60C3 SPP2N6C3XK

Unit Weight:: 0.211644 oz

Tags: SPP20N60C3, SPP20N60C, SPP20N60, SPP20N6, SPP20N, SPP20, SPP2, SPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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SPP20N60C3XKSA1 Description

***ure Electronics: Single N-Channel 650 V 190 mOhm 114 nC CoolMOS Power Mosfet - TO-220-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, COOLMOS, 650V, 20.7V, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***ical: Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 7.0pF 50volts C0G +/-0.5pF

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,23.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 23.8 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 176

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 500 V 158 mOhm MDmesh II Power MOSFET - TO-220FP

***ical: Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N CH, 500V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ical: Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***enic: 600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ow.cn: Trans MOSFET N-CH Si 600V 26.7A Automotive 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 600V, 26.7A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:26.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
SPP20N60C3XKSA1 DISTI # SPP20N60C3XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 20.7A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$2.7381 500:$3.2466 100:$4.0094 50:$4.4006 1:$5.4800
SPP20N60C3XK DISTI # SPP20N60C3XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$2.4900 502:$2.3900 1002:$2.2900 2500:$2.2900 5000:$2.1900
SPP20N60C3XKSA1 DISTI # 95W8643	Infineon Technologies AG	MOSFET, N-CH, 600V, 20.7A, 208W, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:20.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$4.7100 10:$4.0000 25:$3.8200 50:$3.6500 100:$3.4700 250:$3.2900 500:$2.9600
SPP20N60C3XKSA1 DISTI # 726-SPP20N60C3XKSA1	Infineon Technologies AG	MOSFET N-Ch 650V 20.7A TO220-3 RoHS: Compliant	0	1:$4.7100 10:$4.0000 100:$3.4700 250:$3.2900 500:$2.9600
SPP20N60C3XKSA1 DISTI # 2325467	Infineon Technologies AG	MOSFET, N-CH, 650V, 20.7A, TO-220 RoHS: Compliant	0	1:$5.3800 5:$5.0300 20:$4.4500 50:$4.2000 100:$3.9900
SPP20N60C3XKSA1 DISTI # 2325467	Infineon Technologies AG	MOSFET, N-CH, 650V, 20.7A, TO-220 RoHS: Compliant	0	1:£3.5300 10:£2.3100 100:£2.2800 250:£2.2500 500:£2.2200

Image	Part #	Description
	Mfr.#: SPP20N60CFDXKSA1 OMO.#: OMO-SPP20N60CFDXKSA1	MOSFET N-Ch 600V 20.7A TO220-3
	Mfr.#: SPP20N60CFD OMO.#: OMO-SPP20N60CFD-128	MOSFET N-Ch 650V 20.7A TO220-3 CoolMOS CFD
	Mfr.#: SPP20N60C3 OMO.#: OMO-SPP20N60C3-317	RF Bipolar Transistors MOSFET N-Ch 600V 20.7A TO220-3 CoolMOS C3
	Mfr.#: SPP20N60C2 20N60C2 OMO.#: OMO-SPP20N60C2-20N60C2-1190	New and Original
	Mfr.#: SPP20N60C3,20N60C3, OMO.#: OMO-SPP20N60C3-20N60C3--1190	New and Original
	Mfr.#: SPP20N60C3/IXFP22N65X2 OMO.#: OMO-SPP20N60C3-IXFP22N65X2-1190	New and Original
	Mfr.#: SPP20N60C3XKSA1 OMO.#: OMO-SPP20N60C3XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 20.7A TO-220
	Mfr.#: SPP20N60S5XKSA1 OMO.#: OMO-SPP20N60S5XKSA1-INFINEON-TECHNOLOGIES	HIGH POWER_LEGACY
	Mfr.#: SPP20N65C3 20N65C3 OMO.#: OMO-SPP20N65C3-20N65C3-1190	New and Original
	Mfr.#: SPP20N6C3 OMO.#: OMO-SPP20N6C3-1190	New and Original

SPP20N60C3XKSA1

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Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes