IPB180P04P4-03

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-TO-263-7

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

180 A

Rds On - Drain-Source Resistance:

2.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

190 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

OptiMOS-P2

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Fall Time:

81 ns

Product Type:

MOSFET

Rise Time:

31 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

72 ns

Typical Turn-On Delay Time:

48 ns

Part # Aliases:

IPB180P04P403ATMA1 IPB18P4P43XT SP000840202

Unit Weight:

0.056438 oz

Tags

IPB180P04P4, IPB180P, IPB18, IPB1, IPB