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SISF00DN-T1-GE3

SISF00DN-T1-GE3
Mfr. #:
SISF00DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
Lifecycle:
New from this manufacturer.
Datasheet:
SISF00DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISF00DN-T1-GE3 DatasheetSISF00DN-T1-GE3 Datasheet (P4-P6)SISF00DN-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
SISF00DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8SCD-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
4.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
- 16 V, 20 V
Qg - Gate Charge:
53 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69.4 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIS
Transistor Type:
2 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
130 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
10 ns
Tags
SISF, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3TR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.5954
  • 3000:$0.6252
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3CT-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 60A 8-Pin PowerPAK 1212-8SCD - Tape and Reel (Alt: SISF00DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5449
  • 30000:$0.5599
  • 18000:$0.5759
  • 12000:$0.5999
  • 6000:$0.6189
SISF00DN-T1-GE3
DISTI # 81AC2794		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,RoHS Compliant: Yes0
  • 500:$0.8170
  • 250:$0.8830
  • 100:$0.9490
  • 50:$1.0400
  • 25:$1.1400
  • 10:$1.2300
  • 1:$1.4900
SISF00DN-T1-GE3
DISTI # 81AC3490		Vishay IntertechnologiesCOMMON-DRAIN DUAL N-CH 30V(S1-S2)MOS0
  • 10000:$0.5410
  • 6000:$0.5530
  • 4000:$0.5750
  • 2000:$0.6380
  • 1000:$0.7020
  • 1:$0.7320
SISF00DN-T1-GE3
DISTI # 78-SISF00DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2200
  • 100:$0.9400
  • 500:$0.8090
  • 1000:$0.6380
  • 3000:$0.5960
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 12120
  • 500:£0.5930
  • 250:£0.6410
  • 100:£0.6890
  • 25:£0.9010
  • 5:£0.9980
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212
RoHS: Compliant		0
  • 1000:$1.0100
  • 500:$1.0600
  • 250:$1.2500
  • 100:$1.5200
  • 10:$1.9300
  • 1:$2.3400
Image Part # Description
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3

 MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3-VISHAY

 MOSFET DUAL N-CH 30V POWERPAK 12
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of SISF00DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.48
$1.48
10
$1.22
$12.20
100
$0.94
$94.00
500
$0.81
$404.50
1000
$0.64
$638.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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