IRF7329TRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

9.2 A

Rds On - Drain-Source Resistance:

17 mOhms

Vgs th - Gate-Source Threshold Voltage:

900 mV

Qg - Gate Charge:

57 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Dual

Packaging:

Reel

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

2 P-Channel

Width:

3.9 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

25 S

Fall Time:

260 ns

Product Type:

MOSFET

Rise Time:

8.6 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Part # Aliases:

SP001566104

Unit Weight:

0.019048 oz

Tags

IRF7329TRP, IRF7329T, IRF7329, IRF732, IRF73, IRF7, IRF