IRF7329T

IRF7329TRPBF vs IRF7329TR vs IRF7329TRPBF,

 
PartNumberIRF7329TRPBFIRF7329TRIRF7329TRPBF,
DescriptionMOSFET MOSFT DUAL PCh -12V 9.2AMOSFET 2P-CH 12V 9.2A 8-SOIC
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current9.2 A--
Rds On Drain Source Resistance17 mOhms--
Vgs th Gate Source Threshold Voltage900 mV--
Qg Gate Charge57 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
PackagingReelTape & Reel (TR)-
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min25 S--
Fall Time260 ns--
Product TypeMOSFET--
Rise Time8.6 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001566104--
Unit Weight0.019048 oz--
Series-HEXFETR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-12V-
Input Capacitance Ciss Vds-3450pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-9.2A-
Rds On Max Id Vgs-17 mOhm @ 9.2A, 4.5V-
Vgs th Max Id-900mV @ 250μA-
Gate Charge Qg Vgs-57nC @ 4.5V-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF7329TRPBF MOSFET MOSFT DUAL PCh -12V 9.2A
Infineon Technologies
Infineon Technologies
IRF7329TR MOSFET 2P-CH 12V 9.2A 8-SOIC
IRF7329TRPBF MOSFET 2P-CH 12V 9.2A 8-SOIC
IRF7329TRPBF, New and Original
IRF7329TRPBF,IRF7329TR,I New and Original
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