IGW60N60H3

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

1.85 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

80 A

Pd - Power Dissipation:

416 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 175 C

Series:

HighSpeed 3

Packaging:

Tube

Brand:

Infineon Technologies

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

240

Subcategory:

IGBTs

Tradename:

TRENCHSTOP

Part # Aliases:

IGW60N60H3FKSA1 IGW6N6H3XK SP000925524

Unit Weight:

0.211644 oz

Tags

IGW60N6, IGW60N, IGW6, IGW