IRFB3206GPBF

Mfr. #:: IRFB3206GPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 60V 210A 3mOhm 120nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFB3206GPBF Datasheet
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Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 210 A

Rds On - Drain-Source Resistance:: 2.4 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 120 nC

Pd - Power Dissipation:: 300 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001565784

Unit Weight:: 0.211644 oz

Tags: IRFB3206, IRFB320, IRFB32, IRFB3, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRFB3206GPBF Description

***ernational Rectifier: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package

***ure Electronics: Single N-Channel 60 V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

***(Formerly Allied Electronics): MOSFET, 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, HALOGEN-FREE

***Yang: Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ark: Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:210A; On Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:4V; Package/Case:3-TO-220 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de

***ure Electronics: Single N-Channel 75 V 7 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 75V 140A 7mΩ 150°C TO-220 IRF3808PBF

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***el Electronic: Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 75V, 140A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:550A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20

***ure Electronics: Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***eco: MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB

***Yang: Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***ment14 APAC: MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***emi: 60 V, 120 A, 6 mOhm Single N-Channel Power MOSFET, TO-220

***Yang: Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:130A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:214W ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20

***ure Electronics: Single N-Channel 75 V 7.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3

***eco: IRF1607PBF,MOSFET, 75V, 142A, 7.5 MOHM, 210 NC QG, TO-220AB<

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***et: Trans MOSFET N-CH 80V 142A 3-Pin(3+Tab) TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:142A; On Resistance Rds(On):0.0058Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: N CH MOSFET, 75V, 142A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:142A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:142A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:7.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:570A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 55V 145A Automotive 3-Pin(3+Tab) TO-220AB Rail

***ponent Stockers USA: 75 A 55 V 0.006 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***el Electronic: TRIAC SENS GATE 400V 15A TO220AB

***S: French Electronic Distributor since 1988

***peria: N-channel TrenchMOS standard level FET

***et: Transistor MOSFET N-CH 60V 90A 3-Pin TO-220AB

***enic: 60V 90A 3.75W 6m´Î@10V20A 4.5V@250Ã×A N Channel TO-220AB MOSFETs ROHS

***ronik: N-CH 60V 90A 6mOhm TO220-3 RoHSconf

***ure Electronics: MOSFET 60V 90A 272W 6.0mohm @ 10V

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:60V; Cont Current Id:90A; On State Resistance:0.006ohm; Voltage Vgs Rds on Measurement:10V; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Max Current Id:90A; Max Junction Temperature Tj:175°C; Max Voltage Vds:60V; Max Voltage Vgs:20V; Max Voltage Vgs th:4.5V; Min Voltage Vgs th:2.5V; Power Dissipation:3.75W; Power Dissipation Pd:272W; Rds Measurement Voltage:10V; Rise Time:10ns; Transistor Case Style:TO-220AB

IRFB3206GPBF More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Infineon Automatic Opening Systems: Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRFB3206GPBF DISTI # 30719912	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	928	1000:$1.2192 500:$1.4688 100:$1.6800 11:$2.0928
IRFB3206GPBF DISTI # IRFB3206GPBF-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	1058In Stock	1000:$1.5556 500:$1.8432 100:$2.3226 10:$2.8500 1:$3.1400
IRFB3206GPBF DISTI # C1S322000488298	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	928	500:$1.6600 100:$1.8100 25:$2.2000 5:$2.7100
IRFB3206GPBF DISTI # IRFB3206GPBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB (Alt: IRFB3206GPBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRFB3206GPBF DISTI # IRFB3206GPBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3206GPBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.0039 2000:$0.9679 4000:$0.9329 6000:$0.9009 10000:$0.8849
IRFB3206GPBF DISTI # SP001565784	Infineon Technologies AG	Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB (Alt: SP001565784) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.2669 10:€1.1519 25:€1.0559 50:€1.0139 100:€0.9749 500:€0.9379 1000:€0.9049
IRFB3206GPBF DISTI # 70019671	Infineon Technologies AG	IRFB3206GPBF N-channel MOSFET Transistor,210 A,60 V,3-Pin TO-220 RoHS: Compliant	0	450:$4.6410
IRFB3206GPBF DISTI # 942-IRFB3206GPBF	Infineon Technologies AG	MOSFET MOSFT 60V 210A 3mOhm 120nC RoHS: Compliant	119	1:$2.5700 10:$2.1800 100:$1.7500 500:$1.5300 1000:$1.2700
IRFB3206GPBF DISTI # IRFB3206GPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,150A,300W,TO220AB	84	1:$1.8700 3:$1.6700 10:$1.4800 50:$1.3300

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IRFB3206GPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes