IPI65R150CFDXKSA1

IPI65R150CFDXKSA1
Mfr. #:
IPI65R150CFDXKSA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI65R150CFDXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
IPI65R150
Packaging
Tube
Part-Aliases
IPI65R150CFD IPI65R150CFDXK SP000907028
Unit-Weight
0.073511 oz
Tradename
CoolMOS
Package-Case
TO-262-3
Technology
Si
Number-of-Channels
1 Channel
Transistor-Type
1 N-Channel
Id-Continuous-Drain-Current
72 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Rds-On-Drain-Source-Resistance
150 mOhms
Transistor-Polarity
N-Channel
Tags
IPI65R1, IPI65, IPI6, IPI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262
***i-Key
MOSFET N-CH 650V 22.4A TO-262
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Part # Mfg. Description Stock Price
IPI65R150CFDXKSA1
DISTI # IPI65R150CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.2182
IPI65R150CFDXKSA1
DISTI # SP000907028
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262 (Alt: SP000907028)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
IPI65R150CFDXKSA1Infineon Technologies AGPower Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
13500
  • 1000:$1.5900
  • 500:$1.6800
  • 100:$1.7500
  • 25:$1.8200
  • 1:$1.9600
IPI65R150CFDXKSA1
DISTI # 726-IPI65R150CFDXKSA
Infineon Technologies AGMOSFET N-Ch 700V 72A I2PAK-3
RoHS: Compliant
0
    Image Part # Description
    IPI65R150CFD

    Mfr.#: IPI65R150CFD

    OMO.#: OMO-IPI65R150CFD-1190

    Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI65R150CFDXKSA1

    Mfr.#: IPI65R150CFDXKSA1

    OMO.#: OMO-IPI65R150CFDXKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    Availability
    Stock:
    Available
    On Order:
    3500
    Enter Quantity:
    Current price of IPI65R150CFDXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.24
    $2.24
    10
    $2.12
    $21.23
    100
    $2.01
    $201.15
    500
    $1.90
    $949.90
    1000
    $1.79
    $1 788.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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